TY - CONF A1 - de Vienne, Cedric Mathieu A1 - Asllani, Besar A1 - Reynes, Hugo A1 - Guillet, Martin A1 - Al-Hinaai, Amin Salim Obaid A1 - Lefranc, Pierre A1 - Jeannin, Pierre-Olivier A1 - Lefebvre, Bruno A1 - Buttay, Cyril A1 - Huesgen, Till T1 - Towards a Common Mode Current Free Packaging Solution for High Voltage Series Connected SiC MOSFET Switches T2 - PCIM Europe 2023 : International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management 09 – 11 May 2023, Nuremberg N2 - Tests are carried out on two different series-connected switches made of six SiC MOSFETs capable of blocking 10 kV and 20 kV respectively. High voltage capacitors are connected to the drain terminals of the MOSFETs to emulate the common mode currents’ paths due to parasitic capacitances of the packaging. Due to high dV/dt, common mode currents become dangerous to the switch as they unsettle the voltage sharing during turn-off and unbalance switching losses. This could lead some of the MOSFETs to experience avalanche breakdown. A novel packaging approach that suppresses or balances the common mode currents is introduced. KW - ARCHIVE Y1 - 2023 UR - https://opus4.kobv.de/opus4-hs-kempten/frontdoor/index/index/docId/2031 SN - 978-3-8007-6091-6 VL - 2023 SP - 794 EP - 803 PB - VDE Verlag CY - Berlin ER -