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Ultrafast lasers improve the efficiency of CIS thin film solar cells

  • CIS (Cu(In,Ga)(S,Se)2) thin film solar cells show a high potential to achieve the efficiencies of Si wafer-based solar cells. The commonly applied patterning processes for the integrated interconnects are based on nanosecond laser ablation and mechanical scribing. Both methods introduce damages on the thin films by thermal effects and mechanical forces. By picosecond laser processing we realized all three patterning steps to the monolithic thin films CIS modules, namely the separation of the molybdenum back electrode, the absorber and the ZnO font electrode (P1, P2 and P3 respectively). We achieved an efficiency of 14.7% for 300 x 300 mm² modules.

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Metadaten
Author:Gerhard Heise, Andreas Heiss, Helmut Vogt, Heinz Paul HuberORCiD
URN:urn:nbn:de:bvb:m347-opus-3476
DOI:https://doi.org/10.1016/j.phpro.2012.10.091
Parent Title (English):Physics Procedia
Document Type:Article
Language:English
Date of Publication (online):2022/02/07
Year of first Publication:2012
Publishing Institution:Hochschule für angewandte Wissenschaften München
Release Date:2022/02/07
GND Keyword:LaserablationGND; Dünne SchichtGND
Volume:39
Page Number:7
First Page:702
Last Page:708
Note:
Open access under a Creative Commons license CC BY-NC-ND. - Sonderdruck aus: Physics Procedia 39 (2012) 70-708, verfügbar unter https://doi.org/10.1016/j.phpro.2012.10.091
Departments and Institutes:Fakultäten der Hochschule München / FK 06 Fakultät für angewandte Naturwissenschaften und Mechatronik
Dewey Decimal Classification:5 Naturwissenschaften und Mathematik / 53 Physik
Illustrations:Illustration/en
Illustrations:grafische Darstellung/en
Licence (German):Creative Commons - CC BY-NC-ND - Namensnennung - Nicht kommerziell - Keine Bearbeitungen 4.0 International
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