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Local thermomechanical stress can cause failures in semiconductor packages during long-time operation under harsh environmental conditions. This study helps to explain the packaging-induced stress in blue GaN-LEDs soldered onto copper substrates using AuSn alloy as lead-free interconnect material. Based on the finite element method, a virtual prototype is developed to simulate the thermomechanical behavior and stress in the LED and in the complete LED/AuSn/Cu assembly considering plastic and viscoplastic strain. The investigations were performed by varying the temperature between −50°C and 180°C. To validate the model, the simulation results are compared to experimental data collected with Raman spectroscopy. Studies of the urn:x-wiley:03770486:media:jrs5947:jrs5947-math-0003 phonon mode of GaN semiconductor are elaborated to understand the induced thermomechanical stress. The model enables evaluation of the stress in the interfaces of the assembly, which otherwise cannot be accessed by measurements. It serves to predict how assemblies would perform, before committing resources to build a physical prototype.
Reliability is one of the major requirements for power and opto-electronic devices across all segments. High operation temperature and/or high thermomechanical stress cause defects and degradation of materials and interconnects, which may lead to malfunctions with costly or even life-threatening consequences. To avoid or at least reduce failures, nondestructive testing (NDT) methods are common within development and production of power and opto-electronics. Currently, the dominating NDT methods are X-ray, scanning acoustic microscopy (SAM), and transient thermal analysis (TTA). However, they have different strengths and weaknesses with respect to materials and mechanical designs. This paper compares these NDT methods for different interconnect technologies, i.e., reflow soldering, adhesive, and sintered interconnection. While X-ray provided adequate results for soldered interfaces, inspection of adhesives and sintered interconnects was not possible. With SAM, evaluation of adhesives and sintered interconnects was also feasible, but quality depended strongly on the sample under test. TTA enabled sufficiently detailed results for all the interconnect applications. Automated TTA equipment, as the in-house developed tester used within this investigation, enabled measurement times compatible with SAM and X-ray. In the investigations, all methods revealed their pros and cons, and their selection has to depend on the sample under tests and the required analysis depth and data details. In the paper, guidelines are formulated for an appropriate decision on the NDT method depending on sample and requirements.
Investigation Of Stress Generated By Interconnection Processes With Micro-Raman Spectroscopy (μRS)
(2022)
Die-attach bonding with etched micro brass metal pigment flakes for high-power electronics packaging
(2021)
Finite Element simulations and Raman measurements to investigate thermomechanical stress in GaN-LEDs
(2020)
Hybrid Cu particle paste with surface-modified particles for high temperature electronics packaging
(2020)
Process development and reliability of sintered high power chip size packages and flip chip LEDs
(2018)
Development of sinter paste with surface modified copper alloy particles for die-attach bonding
(2020)