<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>943</id>
    <completedYear>2020</completedYear>
    <publishedYear>2020</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>2083</pageFirst>
    <pageLast>2094</pageLast>
    <pageNumber/>
    <edition/>
    <issue>10</issue>
    <volume>51</volume>
    <articleNumber/>
    <type>article</type>
    <publisherName>Wiley</publisherName>
    <publisherPlace>Chichester</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>2020-07-27</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Thermomechanical stress in GaN-LEDs soldered onto Cu substrates studied using finite element method and Raman spectroscopy</title>
    <abstract language="eng">Local thermomechanical stress can cause failures in semiconductor packages during long-time operation under harsh environmental conditions. This study helps to explain the packaging-induced stress in blue GaN-LEDs soldered onto copper substrates using AuSn alloy as lead-free interconnect material. Based on the finite element method, a virtual prototype is developed to simulate the thermomechanical behavior and stress in the LED and in the complete LED/AuSn/Cu assembly considering plastic and viscoplastic strain. The investigations were performed by varying the temperature between −50°C and 180°C. To validate the model, the simulation results are compared to experimental data collected with Raman spectroscopy. Studies of the urn:x-wiley:03770486:media:jrs5947:jrs5947-math-0003 phonon mode of GaN semiconductor are elaborated to understand the induced thermomechanical stress. The model enables evaluation of the stress in the interfaces of the assembly, which otherwise cannot be accessed by measurements. It serves to predict how assemblies would perform, before committing resources to build a physical prototype.</abstract>
    <parentTitle language="eng">Journal of Raman Spectroscopy</parentTitle>
    <identifier type="issn">1097-4555</identifier>
    <identifier type="urn">urn:nbn:de:bvb:573-9438</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="THI_relatedIdentifier">https://doi.org/10.1002/jrs.5947</enrichment>
    <enrichment key="THI_articleversion">published</enrichment>
    <enrichment key="THI_review">peer-review</enrichment>
    <licence>Creative Commons BY 4.0</licence>
    <author>
      <first_name>E</first_name>
      <last_name>Liu</last_name>
    </author>
    <author>
      <first_name>Fosca</first_name>
      <last_name>Conti</last_name>
    </author>
    <author>
      <first_name>Sri Krishna</first_name>
      <last_name>Bhogaraju</last_name>
    </author>
    <author>
      <first_name>Raffaella</first_name>
      <last_name>Signorini</last_name>
    </author>
    <author>
      <first_name>Danilo</first_name>
      <last_name>Pedron</last_name>
    </author>
    <author>
      <first_name>Bernhard</first_name>
      <last_name>Wunderle</last_name>
    </author>
    <author>
      <first_name>Gordon</first_name>
      <last_name>Elger</last_name>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>finite element method</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>gallium nitride (GaN)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>LED</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>semiconductor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>thermomechanical stress</value>
    </subject>
    <collection role="open_access" number="">open_access</collection>
    <collection role="institutes" number="19311">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="institutes" number="19320">Institut für Innovative Mobilität (IIMo)</collection>
    <collection role="persons" number="26589">Elger, Gordon</collection>
    <thesisPublisher>Technische Hochschule Ingolstadt</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-haw/files/943/jrs.5947.pdf</file>
  </doc>
  <doc>
    <id>1322</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>5</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <articleNumber/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace>Piscataway</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>2022-02-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Simulations and experiments to analyze stress phenomena in soldered and sintered interconnections between silicon nitride chips and copper substrates</title>
    <parentTitle language="eng">2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)</parentTitle>
    <identifier type="isbn">978-1-6654-1373-2</identifier>
    <enrichment key="THI_relatedIdentifier">https://doi.org/10.1109/EuroSimE52062.2021.9410869</enrichment>
    <enrichment key="THI_review">peer-review</enrichment>
    <enrichment key="THI_openaccess">nein</enrichment>
    <enrichment key="THI_conferenceName">2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), St. Julian (Malta), 19.-21.04.2021</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <author>
      <first_name>E</first_name>
      <last_name>Liu</last_name>
    </author>
    <author>
      <first_name>Fosca</first_name>
      <last_name>Conti</last_name>
    </author>
    <author>
      <first_name>Sri Krishna</first_name>
      <last_name>Bhogaraju</last_name>
    </author>
    <author>
      <first_name>Gordon</first_name>
      <last_name>Elger</last_name>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Performance evaluation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Analytical models</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Compressive stress</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Thermomechanical processes</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Data models</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Microelectronics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Finite element analysis</value>
    </subject>
    <collection role="institutes" number="19311">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="institutes" number="19320">Institut für Innovative Mobilität (IIMo)</collection>
    <collection role="persons" number="26589">Elger, Gordon</collection>
  </doc>
  <doc>
    <id>1251</id>
    <completedYear/>
    <publishedYear>2020</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>19</pageNumber>
    <edition/>
    <issue>23</issue>
    <volume>10</volume>
    <articleNumber>8516</articleNumber>
    <type>article</type>
    <publisherName>MDPI</publisherName>
    <publisherPlace>Basel</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>2022-02-15</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Comparison of Nondestructive Testing Methods for Solder, Sinter, and Adhesive Interconnects in Power and Opto-Electronics</title>
    <abstract language="eng">Reliability is one of the major requirements for power and opto-electronic devices across all segments. High operation temperature and/or high thermomechanical stress cause defects and degradation of materials and interconnects, which may lead to malfunctions with costly or even life-threatening consequences. To avoid or at least reduce failures, nondestructive testing (NDT) methods are common within development and production of power and opto-electronics. Currently, the dominating NDT methods are X-ray, scanning acoustic microscopy (SAM), and transient thermal analysis (TTA). However, they have different strengths and weaknesses with respect to materials and mechanical designs. This paper compares these NDT methods for different interconnect technologies, i.e., reflow soldering, adhesive, and sintered interconnection. While X-ray provided adequate results for soldered interfaces, inspection of adhesives and sintered interconnects was not possible. With SAM, evaluation of adhesives and sintered interconnects was also feasible, but quality depended strongly on the sample under test. TTA enabled sufficiently detailed results for all the interconnect applications. Automated TTA equipment, as the in-house developed tester used within this investigation, enabled measurement times compatible with SAM and X-ray. In the investigations, all methods revealed their pros and cons, and their selection has to depend on the sample under tests and the required analysis depth and data details. In the paper, guidelines are formulated for an appropriate decision on the NDT method depending on sample and requirements.</abstract>
    <parentTitle language="eng">Applied Sciences</parentTitle>
    <identifier type="issn">2076-3417</identifier>
    <identifier type="urn">urn:nbn:de:bvb:573-12518</identifier>
    <enrichment key="THI_relatedIdentifier">https://doi.org/10.3390/app10238516</enrichment>
    <enrichment key="THI_review">peer-review</enrichment>
    <enrichment key="THI_openaccess">ja</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="THI_articleversion">published</enrichment>
    <licence>Creative Commons BY 4.0</licence>
    <author>
      <first_name>Maximilian</first_name>
      <last_name>Schmid</last_name>
    </author>
    <author>
      <first_name>Sri Krishna</first_name>
      <last_name>Bhogaraju</last_name>
    </author>
    <author>
      <first_name>E</first_name>
      <last_name>Liu</last_name>
    </author>
    <author>
      <first_name>Gordon</first_name>
      <last_name>Elger</last_name>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>reliability</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>nondestructive testing</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>power electronics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>scanning acoustic microscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>transient thermal analysis</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>TTA</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>sintering</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>LED</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>MOSFET</value>
    </subject>
    <collection role="open_access" number="">open_access</collection>
    <collection role="institutes" number="19311">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="institutes" number="19320">Institut für Innovative Mobilität (IIMo)</collection>
    <collection role="persons" number="26589">Elger, Gordon</collection>
    <collection role="persons" number="26880">Schmid, Maximilian</collection>
    <thesisPublisher>Technische Hochschule Ingolstadt</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-haw/files/1251/applsci-10-08516.pdf</file>
  </doc>
  <doc>
    <id>1328</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>526</pageFirst>
    <pageLast>531</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <articleNumber/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace>Piscataway</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>2022-02-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Low temperature and low pressure die-attach bonding of high power light emitting diodes with self reducing copper complex paste</title>
    <parentTitle language="eng">IEEE 71st Electronic Components and Technology Conference ECTC 2021, Proceedings</parentTitle>
    <identifier type="isbn">978-1-6654-4097-4</identifier>
    <enrichment key="THI_relatedIdentifier">https://doi.org/10.1109/ECTC32696.2021.00094</enrichment>
    <enrichment key="THI_review">peer-review</enrichment>
    <enrichment key="THI_openaccess">nein</enrichment>
    <enrichment key="THI_conferenceName">2021 IEEE 71st Electronic Components and Technology Conference (ECTC), online, 01.06. - 04.07.2021</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <author>
      <first_name>Sri Krishna</first_name>
      <last_name>Bhogaraju</last_name>
    </author>
    <author>
      <first_name>Maximilian</first_name>
      <last_name>Schmid</last_name>
    </author>
    <author>
      <first_name>Elias</first_name>
      <last_name>Hufnagel</last_name>
    </author>
    <author>
      <first_name>Fosca</first_name>
      <last_name>Conti</last_name>
    </author>
    <author>
      <first_name>Hiren R.</first_name>
      <last_name>Kotadia</last_name>
    </author>
    <author>
      <first_name>Gordon</first_name>
      <last_name>Elger</last_name>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>low temperature sintering</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>rapid sintering</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Cu(II) formate</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>reducing binder</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>low pressure sintering</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>high bond strength</value>
    </subject>
    <collection role="institutes" number="19311">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="institutes" number="19320">Institut für Innovative Mobilität (IIMo)</collection>
    <collection role="persons" number="26589">Elger, Gordon</collection>
    <collection role="persons" number="26880">Schmid, Maximilian</collection>
  </doc>
  <doc>
    <id>1329</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>71</pageFirst>
    <pageLast>72</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <articleNumber/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace>Piscataway</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>2022-02-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Characterization of copper sintered interconnects by transient thermal analysis</title>
    <parentTitle language="eng">2021 International Conference on Electronics Packaging (ICEP 2021)</parentTitle>
    <identifier type="isbn">978-4-9911-9111-4</identifier>
    <enrichment key="THI_relatedIdentifier">https://doi.org/10.23919/ICEP51988.2021.9451966</enrichment>
    <enrichment key="THI_review">peer-review</enrichment>
    <enrichment key="THI_openaccess">nein</enrichment>
    <enrichment key="THI_conferenceName">2021 International Conference on Electronics Packaging (ICEP), online, 12.-14.05.2021</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <author>
      <first_name>Maximilian</first_name>
      <last_name>Schmid</last_name>
    </author>
    <author>
      <first_name>Sri Krishna</first_name>
      <last_name>Bhogaraju</last_name>
    </author>
    <author>
      <first_name>Gordon</first_name>
      <last_name>Elger</last_name>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>copper sintering</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>transient thermal analysis (TTA)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>thermal impedance (Zth)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>non-destructive testing (NDT)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>scanning acoustic microscopy (SAM)</value>
    </subject>
    <collection role="institutes" number="19311">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="institutes" number="19320">Institut für Innovative Mobilität (IIMo)</collection>
    <collection role="persons" number="26589">Elger, Gordon</collection>
    <collection role="persons" number="26880">Schmid, Maximilian</collection>
  </doc>
  <doc>
    <id>1338</id>
    <completedYear/>
    <publishedYear>2020</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>7</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <articleNumber/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace>Piscataway</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>2022-02-22</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Finite Element simulations and Raman measurements to investigate thermomechanical stress in GaN-LEDs</title>
    <parentTitle language="eng">2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC)</parentTitle>
    <identifier type="isbn">978-1-7281-6293-5</identifier>
    <enrichment key="THI_relatedIdentifier">https://doi.org/10.1109/ESTC48849.2020.9229843</enrichment>
    <enrichment key="THI_review">peer-review</enrichment>
    <enrichment key="THI_openaccess">nein</enrichment>
    <enrichment key="THI_conferenceName">2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC), Tønsberg (Norway), 15.-18.09.2020</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <author>
      <first_name>Fosca</first_name>
      <last_name>Conti</last_name>
    </author>
    <author>
      <first_name>E</first_name>
      <last_name>Liu</last_name>
    </author>
    <author>
      <first_name>Sri Krishna</first_name>
      <last_name>Bhogaraju</last_name>
    </author>
    <author>
      <first_name>Bernhard</first_name>
      <last_name>Wunderle</last_name>
    </author>
    <author>
      <first_name>Gordon</first_name>
      <last_name>Elger</last_name>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>finite element method</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>gallium nitride (GaN)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>LED</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Raman spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>semiconductor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>thermomechanical stress</value>
    </subject>
    <collection role="institutes" number="19311">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="institutes" number="19320">Institut für Innovative Mobilität (IIMo)</collection>
    <collection role="persons" number="26589">Elger, Gordon</collection>
  </doc>
  <doc>
    <id>1339</id>
    <completedYear/>
    <publishedYear>2020</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>7</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <articleNumber/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace>Piscataway</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>2022-02-22</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Copper die bonding using copper formate based pastes with α-terpineol, amino-2-propanol and hexylamine as binders</title>
    <parentTitle language="eng">2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC)</parentTitle>
    <identifier type="isbn">978-1-7281-6293-5</identifier>
    <enrichment key="THI_relatedIdentifier">https://doi.org/10.1109/ESTC48849.2020.9229801</enrichment>
    <enrichment key="THI_review">peer-review</enrichment>
    <enrichment key="THI_openaccess">nein</enrichment>
    <enrichment key="THI_conferenceName">2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC), Tønsberg (Norway), 15.-18.09.2020</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <author>
      <first_name>Sri Krishna</first_name>
      <last_name>Bhogaraju</last_name>
    </author>
    <author>
      <first_name>Fosca</first_name>
      <last_name>Conti</last_name>
    </author>
    <author>
      <first_name>Gordon</first_name>
      <last_name>Elger</last_name>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>copper inks</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>sintering</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>low temperature</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>copper nano particles</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>copper formate</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>binder</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>terpineol</value>
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    <title language="eng">Hybrid Cu sinter paste for low temperature bonding of bare semiconductors</title>
    <abstract language="deu">A novel hybrid copper paste was developed for low temperature sintering of bare semiconductors. Cu(II) formate (Cu(for)) is complexed in amino-2-propanol (A2P) and added to a paste of etched brass micro flakes. A two-step sintering process is applied: The paste is printed and dried at 120 °C under formic acid (FA) enriched N2 atmosphere (FAN2) for 5 min. Afterwards, bare semiconductors are placed and sintered at 250 °C for 5 min applying a bonding pressure of 20 MPa/10 MPa. By the thermal decomposition of the Cu(for) atomic Cu is released and forms in-situ Cu-nanoparticles. An interconnect is realized with shear strength &gt;100 MPa.</abstract>
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