<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>943</id>
    <completedYear>2020</completedYear>
    <publishedYear>2020</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>2083</pageFirst>
    <pageLast>2094</pageLast>
    <pageNumber/>
    <edition/>
    <issue>10</issue>
    <volume>51</volume>
    <articleNumber/>
    <type>article</type>
    <publisherName>Wiley</publisherName>
    <publisherPlace>Chichester</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>2020-07-27</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Thermomechanical stress in GaN-LEDs soldered onto Cu substrates studied using finite element method and Raman spectroscopy</title>
    <abstract language="eng">Local thermomechanical stress can cause failures in semiconductor packages during long-time operation under harsh environmental conditions. This study helps to explain the packaging-induced stress in blue GaN-LEDs soldered onto copper substrates using AuSn alloy as lead-free interconnect material. Based on the finite element method, a virtual prototype is developed to simulate the thermomechanical behavior and stress in the LED and in the complete LED/AuSn/Cu assembly considering plastic and viscoplastic strain. The investigations were performed by varying the temperature between −50°C and 180°C. To validate the model, the simulation results are compared to experimental data collected with Raman spectroscopy. Studies of the urn:x-wiley:03770486:media:jrs5947:jrs5947-math-0003 phonon mode of GaN semiconductor are elaborated to understand the induced thermomechanical stress. The model enables evaluation of the stress in the interfaces of the assembly, which otherwise cannot be accessed by measurements. It serves to predict how assemblies would perform, before committing resources to build a physical prototype.</abstract>
    <parentTitle language="eng">Journal of Raman Spectroscopy</parentTitle>
    <identifier type="issn">1097-4555</identifier>
    <identifier type="urn">urn:nbn:de:bvb:573-9438</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="THI_relatedIdentifier">https://doi.org/10.1002/jrs.5947</enrichment>
    <enrichment key="THI_articleversion">published</enrichment>
    <enrichment key="THI_review">peer-review</enrichment>
    <licence>Creative Commons BY 4.0</licence>
    <author>
      <first_name>E</first_name>
      <last_name>Liu</last_name>
    </author>
    <author>
      <first_name>Fosca</first_name>
      <last_name>Conti</last_name>
    </author>
    <author>
      <first_name>Sri Krishna</first_name>
      <last_name>Bhogaraju</last_name>
    </author>
    <author>
      <first_name>Raffaella</first_name>
      <last_name>Signorini</last_name>
    </author>
    <author>
      <first_name>Danilo</first_name>
      <last_name>Pedron</last_name>
    </author>
    <author>
      <first_name>Bernhard</first_name>
      <last_name>Wunderle</last_name>
    </author>
    <author>
      <first_name>Gordon</first_name>
      <last_name>Elger</last_name>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>finite element method</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>gallium nitride (GaN)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>LED</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>semiconductor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>thermomechanical stress</value>
    </subject>
    <collection role="open_access" number="">open_access</collection>
    <collection role="institutes" number="19311">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="institutes" number="19320">Institut für Innovative Mobilität (IIMo)</collection>
    <collection role="persons" number="26589">Elger, Gordon</collection>
    <thesisPublisher>Technische Hochschule Ingolstadt</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-haw/files/943/jrs.5947.pdf</file>
  </doc>
  <doc>
    <id>1327</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>10</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <articleNumber/>
    <type>conferenceobject</type>
    <publisherName>SPIE</publisherName>
    <publisherPlace>Bellingham</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>2022-02-21</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Micro-Raman to detect stress phenomena in Si-chips bonded onto Cu substrates</title>
    <parentTitle language="eng">Integrated Optics: Design, Devices, Systems and Applications VI</parentTitle>
    <identifier type="isbn">978-1-5106-4385-7</identifier>
    <note>Poster + Paper</note>
    <enrichment key="THI_relatedIdentifier">https://doi.org/10.1117/12.2576414</enrichment>
    <enrichment key="THI_review">editorial review</enrichment>
    <enrichment key="THI_openaccess">nein</enrichment>
    <enrichment key="THI_conferenceName">SPIE Optics + Optoelectronics, online, 19.-23.04.2021</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <author>
      <first_name>Jacopo</first_name>
      <last_name>Pascucci</last_name>
    </author>
    <editor>
      <first_name>Pavel</first_name>
      <last_name>Cheben</last_name>
    </editor>
    <author>
      <first_name>Fosca</first_name>
      <last_name>Conti</last_name>
    </author>
    <editor>
      <first_name>Jiří</first_name>
      <last_name>Čtyroký</last_name>
    </editor>
    <author>
      <first_name>Sri Krishna</first_name>
      <last_name>Bhogaraju</last_name>
    </author>
    <editor>
      <first_name>Iñigo</first_name>
      <last_name>Molina-Fernández</last_name>
    </editor>
    <author>
      <first_name>Raffaella</first_name>
      <last_name>Signorini</last_name>
    </author>
    <author>
      <first_name>E</first_name>
      <last_name>Liu</last_name>
    </author>
    <author>
      <first_name>Danilo</first_name>
      <last_name>Pedron</last_name>
    </author>
    <author>
      <first_name>Gordon</first_name>
      <last_name>Elger</last_name>
    </author>
    <collection role="institutes" number="19311">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="institutes" number="19320">Institut für Innovative Mobilität (IIMo)</collection>
    <collection role="persons" number="26589">Elger, Gordon</collection>
  </doc>
  <doc>
    <id>1861</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>10</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <articleNumber/>
    <type>conferenceobject</type>
    <publisherName>SPIE</publisherName>
    <publisherPlace>Bellingham</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>2022-03-09</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Thermomechanical local stress in assembled GaN LEDs investigated by Raman optical spectroscopy</title>
    <parentTitle language="eng">Integrated Optics: Design, Devices, Systems, and Applications V</parentTitle>
    <identifier type="isbn">978-1-5106-2729-1</identifier>
    <note>Presentation + Paper</note>
    <enrichment key="THI_relatedIdentifier">https://doi.org/10.1117/12.2520992</enrichment>
    <enrichment key="THI_conferenceName">SPIE OPTICS + OPTOELECTRONICS, Prague (Czech Republic), 01.-04.04.2019</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="THI_openaccess">nein</enrichment>
    <enrichment key="THI_review">editorial review</enrichment>
    <author>
      <first_name>Raffaella</first_name>
      <last_name>Signorini</last_name>
    </author>
    <editor>
      <first_name>Pavel</first_name>
      <last_name>Cheben</last_name>
    </editor>
    <author>
      <first_name>Fosca</first_name>
      <last_name>Conti</last_name>
    </author>
    <editor>
      <first_name>Jiří</first_name>
      <last_name>Čtyroký</last_name>
    </editor>
    <author>
      <first_name>Enrico</first_name>
      <last_name>Brugnolotto</last_name>
    </author>
    <editor>
      <first_name>Iñigo</first_name>
      <last_name>Molina-Fernández</last_name>
    </editor>
    <author>
      <first_name>Danilo</first_name>
      <last_name>Pedron</last_name>
    </author>
    <author>
      <first_name>E</first_name>
      <last_name>Liu</last_name>
    </author>
    <author>
      <first_name>Sri Krishna</first_name>
      <last_name>Bhogaraju</last_name>
    </author>
    <author>
      <first_name>Gordon</first_name>
      <last_name>Elger</last_name>
    </author>
    <collection role="institutes" number="15984">Fakultät Elektrotechnik und Informatik</collection>
    <collection role="institutes" number="19320">Institut für Innovative Mobilität (IIMo)</collection>
    <collection role="persons" number="26589">Elger, Gordon</collection>
  </doc>
  <doc>
    <id>1863</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>6</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <articleNumber/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace>Piscataway</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>2022-03-09</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Investigation of thermomechanical local stress induced in assembled GaN LEDs</title>
    <parentTitle language="eng">2019 25th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)</parentTitle>
    <identifier type="isbn">978-1-7281-2078-2</identifier>
    <enrichment key="THI_relatedIdentifier">https://doi.org/10.1109/THERMINIC.2019.8923629</enrichment>
    <enrichment key="THI_review">peer-review</enrichment>
    <enrichment key="THI_conferenceName">2019 25th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Lecco (Italy), 25.-27.09.2019</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="THI_openaccess">nein</enrichment>
    <author>
      <first_name>Enrico</first_name>
      <last_name>Brugnolotto</last_name>
    </author>
    <author>
      <first_name>Sri Krishna</first_name>
      <last_name>Bhogaraju</last_name>
    </author>
    <author>
      <first_name>E</first_name>
      <last_name>Liu</last_name>
    </author>
    <author>
      <first_name>Fosca</first_name>
      <last_name>Conti</last_name>
    </author>
    <author>
      <first_name>Danilo</first_name>
      <last_name>Pedron</last_name>
    </author>
    <author>
      <first_name>Raffaella</first_name>
      <last_name>Signorini</last_name>
    </author>
    <author>
      <first_name>Gordon</first_name>
      <last_name>Elger</last_name>
    </author>
    <collection role="institutes" number="15984">Fakultät Elektrotechnik und Informatik</collection>
    <collection role="institutes" number="19320">Institut für Innovative Mobilität (IIMo)</collection>
    <collection role="persons" number="26589">Elger, Gordon</collection>
  </doc>
  <doc>
    <id>2754</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>6</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <articleNumber/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace>Piscataway</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>2022-08-23</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Thermomechanical Stress in GaN LED Soldered on Copper Substrate Evaluated by Raman Measurements and Computer Modelling</title>
    <parentTitle language="eng">2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)</parentTitle>
    <identifier type="isbn">978-1-5386-6759-0</identifier>
    <enrichment key="THI_relatedIdentifier">https://doi.org/10.1109/THERMINIC.2018.8593304</enrichment>
    <enrichment key="THI_review">peer-review</enrichment>
    <enrichment key="THI_openaccess">nein</enrichment>
    <enrichment key="THI_conferenceName">2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Stockholm (Sweden), 26.-28.09.2018</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <author>
      <first_name>Raffaella</first_name>
      <last_name>Signorini</last_name>
    </author>
    <author>
      <first_name>Danilo</first_name>
      <last_name>Pedron</last_name>
    </author>
    <author>
      <first_name>Fosca</first_name>
      <last_name>Conti</last_name>
    </author>
    <author>
      <first_name>Alexander</first_name>
      <last_name>Hanss</last_name>
    </author>
    <author>
      <first_name>Sri Krishna</first_name>
      <last_name>Bhogaraju</last_name>
    </author>
    <author>
      <first_name>Gordon</first_name>
      <last_name>Elger</last_name>
    </author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Stress</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Light emitting diodes</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Gallium nitride</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Phonons</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Substrates</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Temperature measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Silicon</value>
    </subject>
    <collection role="institutes" number="15984">Fakultät Elektrotechnik und Informatik</collection>
    <collection role="institutes" number="19320">Institut für Innovative Mobilität (IIMo)</collection>
    <collection role="persons" number="26589">Elger, Gordon</collection>
  </doc>
</export-example>
