@article{BhogarajuKotadiaContietal.2021, author = {Bhogaraju, Sri Krishna and Kotadia, Hiren R. and Conti, Fosca and Mauser, Armin and Rubenbauer, Thomas and Bruetting, Robert and Schneider-Ramelow, Martin and Elger, Gordon}, title = {Die-attach bonding with etched micro brass metal pigment flakes for high-power electronics packaging}, volume = {3}, journal = {ACS Applied Electronic Materials}, number = {10}, publisher = {ACS Publications}, address = {Washington}, issn = {2637-6113}, doi = {https://doi.org/10.1021/acsaelm.1c00721}, pages = {4587 -- 4603}, year = {2021}, language = {en} } @article{ElgerBhogarajuSchneiderRamelow2024, author = {Elger, Gordon and Bhogaraju, Sri Krishna and Schneider-Ramelow, Martin}, title = {Hybrid Cu sinter paste for low temperature bonding of bare semiconductors}, volume = {2024}, pages = {136973}, journal = {Materials Letters}, number = {372}, publisher = {Elsevier}, address = {New York}, issn = {1873-4979}, doi = {https://doi.org/10.1016/j.matlet.2024.136973}, year = {2024}, abstract = {A novel hybrid copper paste was developed for low temperature sintering of bare semiconductors. Cu(II) formate (Cu(for)) is complexed in amino-2-propanol (A2P) and added to a paste of etched brass micro flakes. A two-step sintering process is applied: The paste is printed and dried at 120 °C under formic acid (FA) enriched N2 atmosphere (FAN2) for 5 min. Afterwards, bare semiconductors are placed and sintered at 250 °C for 5 min applying a bonding pressure of 20 MPa/10 MPa. By the thermal decomposition of the Cu(for) atomic Cu is released and forms in-situ Cu-nanoparticles. An interconnect is realized with shear strength >100 MPa.}, language = {en} }