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We present an experimental study on fiber laser micromachining of 4H-SiC semiconductor. In particular, we optimize the process time for percussion drilling of 440 µm and 330 µm thick wafers with a minimum drilling time of, eg, 7.5 ms being achieved for 330 µm thick wafers. The drilled holes are characterized by a low taper, a high circularity and entry diameters of about 60 µm. For laser cutting, effective cutting speeds of 2 mm/s and 0.63 mm/s are obtained for 330 µm and 440 µm wafer thickness, respectively, with the cut kerf width being 65 µm. Both processes are associated with a good quality that is characterized by no chipping and cracks. The capability of the fiber laser based micromachining process is highlighted by cutting complex micrometer scale inner and outer contours into partially metallized SiC wafers with high quality.