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Optical and structural properties of MOVPE grown GaxIn1-xAs/InP strained multiple quantum well structures

  • This paper presents a study of the structural and optical properties of strained GaInAs/ InP multiple quantum well (MQW) structures fabricated by LP-MOVPE. The composition of the Ga x In1−x As films ranged fromx = 0.17 tox = 1.0 and was determined by sputtered neutral mass spectrometry (SNMS) on thick layers. The structures of the MQW samples with well widths from 1.5 to 5 nm were investigated by high resolution x-ray diffraction (HR-XRD). Simulations of the diffraction patterns showed that transition layers of approximately 2 monolayer (ML) thickness with high lattice mismatch exist at the interfaces. Photoluminescence (PL) measurements indicate well widths of a multiple of a monolayer with local variations of one monolayer. The PL peak energies vary smoothly with the Ga concentration. These results were confirmed by optical absorption measurements.
Metadaten
Author:R. Meyer, Hilde Hardtdegen, Detlev Grützmacher, R. Carius, Manfred StollenwerkORCiD, Peter Balk
Parent Title (English):Journal of Electronic Materials
Document Type:Article
Language:English
Year of Completion:1992
Release Date:2019/10/24
GND Keyword:Galliumarsenid; Indiumarsenid; Indiumphosphid
Volume:21
Issue:3
First Page:293
Last Page:298
Urheberrecht:0
research focus :Materials / Innovative Material Processing
Materials / Material Testing & Sensor Technology
Licence (German):Keine Lizenz - es gilt das deutsche Urheberrecht
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