• search hit 1 of 12
Back to Result List

Photoluminescence study of interdiffusion in In0,53Ga0,47/As/InP surface quantum wells

  • We have investigated the thermal stability and interdiffusion of In0.53Ga0.47As/InP surface quantum wells. In these structures the optically active InGaAs layer is bounded on one side by vacuum and on the other side by InP. We obtain well‐defined photoluminescence emission spectra with high intensity. After rapid thermal annealing at temperatures between 500 and 900 °C (annealing time 1 min) we observe strong emission energy shifts of up to 316 meV. By using a simple model of ion intermixing we estimate large interdiffusion coefficients (e.g., 1.7×10−14 cm2 s−1 for T=900 °C) and an activation energy of 1.3 eV for the surface quantum wells.
Metadaten
Author:John Oschinowo, Alfred Forchel, Detlev Grützmacher, Manfred StollenwerkORCiD, Michael Heuken, Klaus Heime
Parent Title (English):Applied Physics Letters
Document Type:Article
Language:English
Year of Completion:1992
Release Date:2019/10/24
GND Keyword:Photolumineszenz
Volume:60
Issue:21
First Page:2660
Last Page:2662
Urheberrecht:0
research focus :Materials / Innovative Material Processing
Materials / Material Testing & Sensor Technology
Licence (German):Keine Lizenz - es gilt das deutsche Urheberrecht
Einverstanden ✔
Diese Webseite verwendet technisch erforderliche Session-Cookies. Durch die weitere Nutzung der Webseite stimmen Sie diesem zu. Unsere Datenschutzerklärung finden Sie hier.