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Optical characterization of strained InGaAs/InP quantum well structures

  • The effects of strain on the optical properties ofmultiple-quantum well structures grown by low pressure metal organic vapor phase epitaxy have been investigated by photoluminescence spectroscopy. The investigated composition range is varied between 0.17 ≤ xGa ≤ 1.00. Sputtered neutrals mass spectroscopy has been used to calibrate the growth interpolated nominal compositions. Distinct peaks from monolayer variations of well thickness are observed from all samples. The analysis of the PL-spectra leads to the assumption of an intermediate layer of InAs0.65P0.35 at the InP to In1−ϰGaχAs(lower) interface.
Metadaten
Author:Karl Wolter, Ralf Schwedler, B. Gallmann, Christian Jaekel, Manfred StollenwerkORCiD, Jean Camassel, Jean Pierre Laurenti
Parent Title (English):Microelectronic Engineering
Document Type:Article
Language:English
Year of Completion:1991
Release Date:2019/10/24
GND Keyword:Indiumarsenid; Galliumarsenid
Volume:15
Issue:1–4
First Page:593
Last Page:596
Urheberrecht:0
research focus :Materials / Innovative Material Processing
Materials / Material Testing & Sensor Technology
Licence (German):Keine Lizenz - es gilt das deutsche Urheberrecht
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