• search hit 1235 of 1254
Back to Result List

Lateral thermal stability modulation for the definition of InGaAs/InP wires

  • We have investigated a novel technique for the definition of semiconductor wires. By the selective local removal of the InP top barrier layer wire patterns in which the top material varies between InP and InGaAs are formed from an InGaAs/InP quantum well. In a subsequent annealing step the top InGaAs layer shows substantially stronger interdiffusion than the InP covered regions (wires). By using luminescence spectroscopy we show that this defectfree enhanced interdiffusion can be used to obtain a lateral energy barrier.
Metadaten
Author:John Oschinowo, Alfred Forchel, Jörg Dreybrodt, Monika Emmerling, Imre Gyuro, Peter Speier, Detlev Grützmacher, Manfred StollenwerkORCiD
Parent Title (English):Microelectronic Engineering
Document Type:Article
Language:English
Year of Completion:1992
Release Date:2019/10/24
GND Keyword:Indiumarsenid; Galliumarsenid
Volume:17
Issue:1–4
First Page:505
Last Page:508
Urheberrecht:0
research focus :Materials / Innovative Material Processing
Materials / Material Testing & Sensor Technology
Licence (German):Keine Lizenz - es gilt das deutsche Urheberrecht
Einverstanden ✔
Diese Webseite verwendet technisch erforderliche Session-Cookies. Durch die weitere Nutzung der Webseite stimmen Sie diesem zu. Unsere Datenschutzerklärung finden Sie hier.