Influence of Sputtering Pressure on the Microstructure and Layer Properties of Iridium Thin Films

  • Iridium layers with low stress, high density, and low surface roughness find widespread use in different high-technology applications. This paper presents a study of the influence of the sputtering pressure on the properties of iridium thin films and of its effect on the substrate surface microstructure. We analysed the dependence of the microstructure, crystalline structure, electrical resistivity, and deposition rate on the sputtering pressure and surface defects of the substrate. For the latter, plasma etching of the substrate was performed for different processing times and its effect on the surface roughness of substrates and, subsequently, on the grown iridium films, was examined. The sputtering pressure and the substrate plasma etching time both had a strong influence on the microstructure and surface roughness. These microstructural changes are in good agreement with the tendency described in the Thornton Structure-Zone Model for different sputtering pressures and the microstructure phase map of Alvarez. The electrical resistivity, deposition rate, and crystalline structure were highly dependent on the sputtering pressure.
Metadaten
Author:Andre Büttner, Anne-Catherine Probst, Florian Emmerich, Christine Damm, Bernd Rellinghaus, Thorsten DöhringORCiD, Manfred StollenwerkORCiD
URL:https://doi.org/10.1016/j.tsf.2018.06.056
ISSN:0040-6090
Parent Title (English):Thin Solid Films
Document Type:Article
Language:English
Year of Completion:2018
Date of first Publication:2018/09/30
Release Date:2018/09/24
Tag:Iridium; TEM; microstructure; sputtering; thin films
GND Keyword:Iridium; Dünne Schicht
Volume:2018
Issue:662
First Page:41
Last Page:46
Urheberrecht:1
research focus :Materials / Innovative Material Processing
Materials / Material Testing & Sensor Technology
Licence (German):Keine Lizenz - es gilt das deutsche Urheberrecht
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