TY - JOUR A1 - Oschinowo, John A1 - Forchel, Alfred A1 - Grützmacher, Detlev A1 - Stollenwerk, Manfred A1 - Heuken, Michael A1 - Heime, Klaus T1 - Photoluminescence study of interdiffusion in In0,53Ga0,47/As/InP surface quantum wells JF - Applied Physics Letters N2 - We have investigated the thermal stability and interdiffusion of In0.53Ga0.47As/InP surface quantum wells. In these structures the optically active InGaAs layer is bounded on one side by vacuum and on the other side by InP. We obtain well‐defined photoluminescence emission spectra with high intensity. After rapid thermal annealing at temperatures between 500 and 900 °C (annealing time 1 min) we observe strong emission energy shifts of up to 316 meV. By using a simple model of ion intermixing we estimate large interdiffusion coefficients (e.g., 1.7×10−14 cm2 s−1 for T=900 °C) and an activation energy of 1.3 eV for the surface quantum wells. KW - Photolumineszenz Y1 - 1992 VL - 60 IS - 21 SP - 2660 EP - 2662 ER - TY - CHAP A1 - Oschinowo, John A1 - Forchel, Alfred A1 - Grützmacher, Detlev A1 - Stollenwerk, Manfred T1 - RTA study of thermal stability and interdiffusion of InGaAs/InP quantum wells - the influence of InGaAs cap layers T2 - Third International Conference Indium Phosphide and Related Materials Cardiff/Wales N2 - A study of the thermal stability of InGaAs/InP quantum wells with different top barrier compositions that used rapid thermal annealing at temperatures between 600 degrees C and 950 degrees C (annealing time 1 min) is discussed. The thermal interdiffusion effects were evaluated by photoluminescence spectroscopy. From the temperature dependence of the luminescence energy shifts the interdiffusion coefficients and activation energies are determined. KW - Photolumineszenzspektroskopie KW - Indiumarsenid KW - Galliumarsenid KW - Indiumphosphid Y1 - 1991 SP - 606 EP - 609 ER - TY - JOUR A1 - Oschinowo, John A1 - Forchel, Alfred A1 - Dreybrodt, Jörg A1 - Emmerling, Monika A1 - Gyuro, Imre A1 - Speier, Peter A1 - Grützmacher, Detlev A1 - Stollenwerk, Manfred T1 - Lateral thermal stability modulation for the definition of InGaAs/InP wires JF - Microelectronic Engineering N2 - We have investigated a novel technique for the definition of semiconductor wires. By the selective local removal of the InP top barrier layer wire patterns in which the top material varies between InP and InGaAs are formed from an InGaAs/InP quantum well. In a subsequent annealing step the top InGaAs layer shows substantially stronger interdiffusion than the InP covered regions (wires). By using luminescence spectroscopy we show that this defectfree enhanced interdiffusion can be used to obtain a lateral energy barrier. KW - Indiumarsenid KW - Galliumarsenid Y1 - 1992 VL - 17 IS - 1–4 SP - 505 EP - 508 ER -