TY - JOUR A1 - Michaeli, Walter A1 - Stollenwerk, Manfred A1 - Telgenbüscher, Klaus T1 - Plasmabehandlung - Ein umweltfreundliches Verfahren zur Oberflächenvorbehandlung und -reinigung JF - Scope-Journal Special KW - Plasmatechnik KW - Oberflächenbehandlung Y1 - 1993 VL - 1993 IS - 16 SP - 21 EP - 23 ER - TY - GEN A1 - Zell, Harald A1 - Telgenbüscher, Klaus A1 - Stollenwerk, Manfred T1 - Kratzfeste Beschichtungen von Kunststoffen mittels Plasmapolymerisation KW - Plasmapolymerisation Y1 - 1993 N1 - Seminar “Hartstoffbeschichtungen“, Haus der Technik, Essen, 28./29. September 1993 ER - TY - CHAP A1 - Michaeli, Walter A1 - Leiber, Jörn A1 - Telgenbüscher, Klaus A1 - Stollenwerk, Manfred T1 - Plasma polymerization in automotive industries - A possibility for the reduction of permeation in plastic fuel tanks T2 - 26th intern. Symposium on Automotive Technology and Automation, Aachen Tagungsband KW - Plasmapolymerisation KW - Kraftfahrzeugindustrie Y1 - 1993 SP - 469 EP - 476 ER - TY - GEN A1 - Stollenwerk, Manfred T1 - Oberflächenmodifikation mittels Plasmatechnik KW - Plasmatechnik KW - Oberflächenbehandlung Y1 - 1993 N1 - VDI-Werkstoff-Forum auf der Hannovermesse, April 1993 ER - TY - JOUR A1 - Meyer, R. A1 - Hardtdegen, Hilde A1 - Grützmacher, Detlev A1 - Carius, R. A1 - Stollenwerk, Manfred A1 - Balk, Peter T1 - Optical and structural properties of MOVPE grown GaxIn1-xAs/InP strained multiple quantum well structures JF - Journal of Electronic Materials N2 - This paper presents a study of the structural and optical properties of strained GaInAs/ InP multiple quantum well (MQW) structures fabricated by LP-MOVPE. The composition of the Ga x In1−x As films ranged fromx = 0.17 tox = 1.0 and was determined by sputtered neutral mass spectrometry (SNMS) on thick layers. The structures of the MQW samples with well widths from 1.5 to 5 nm were investigated by high resolution x-ray diffraction (HR-XRD). Simulations of the diffraction patterns showed that transition layers of approximately 2 monolayer (ML) thickness with high lattice mismatch exist at the interfaces. Photoluminescence (PL) measurements indicate well widths of a multiple of a monolayer with local variations of one monolayer. The PL peak energies vary smoothly with the Ga concentration. These results were confirmed by optical absorption measurements. KW - Galliumarsenid KW - Indiumarsenid KW - Indiumphosphid Y1 - 1992 VL - 21 IS - 3 SP - 293 EP - 298 ER - TY - JOUR A1 - Oschinowo, John A1 - Forchel, Alfred A1 - Dreybrodt, Jörg A1 - Emmerling, Monika A1 - Gyuro, Imre A1 - Speier, Peter A1 - Grützmacher, Detlev A1 - Stollenwerk, Manfred T1 - Lateral thermal stability modulation for the definition of InGaAs/InP wires JF - Microelectronic Engineering N2 - We have investigated a novel technique for the definition of semiconductor wires. By the selective local removal of the InP top barrier layer wire patterns in which the top material varies between InP and InGaAs are formed from an InGaAs/InP quantum well. In a subsequent annealing step the top InGaAs layer shows substantially stronger interdiffusion than the InP covered regions (wires). By using luminescence spectroscopy we show that this defectfree enhanced interdiffusion can be used to obtain a lateral energy barrier. KW - Indiumarsenid KW - Galliumarsenid Y1 - 1992 VL - 17 IS - 1–4 SP - 505 EP - 508 ER - TY - JOUR A1 - Wolter, Karl A1 - Schwedler, Ralf A1 - Gallmann, B. A1 - Jaekel, Christian A1 - Stollenwerk, Manfred A1 - Camassel, Jean A1 - Laurenti, Jean Pierre T1 - Optical characterization of strained InGaAs/InP quantum well structures JF - Microelectronic Engineering N2 - The effects of strain on the optical properties ofmultiple-quantum well structures grown by low pressure metal organic vapor phase epitaxy have been investigated by photoluminescence spectroscopy. The investigated composition range is varied between 0.17 ≤ xGa ≤ 1.00. Sputtered neutrals mass spectroscopy has been used to calibrate the growth interpolated nominal compositions. Distinct peaks from monolayer variations of well thickness are observed from all samples. The analysis of the PL-spectra leads to the assumption of an intermediate layer of InAs0.65P0.35 at the InP to In1−ϰGaχAs(lower) interface. KW - Indiumarsenid KW - Galliumarsenid Y1 - 1991 VL - 15 IS - 1–4 SP - 593 EP - 596 ER - TY - JOUR A1 - Schwedler, Ralf A1 - Wolter, Karl A1 - Gallmann, B. A1 - Grützmacher, Detlev A1 - Stollenwerk, Manfred A1 - Kurz, H. T1 - Optical characterization of In-rich strained In1-xGaxAs/InP single- and multiple-quantum-wells JF - Materials Science and Engineering: B N2 - We report on the photoluminescence spectroscopy of a large set of strained In1−xGaxAs/InP quantum well structures grown by low pressure metallo-organic vapour phase epitaxy. Distinct peaks from monolayer steps are observed in all samples. For the first time, data on indium-rich In1−xGaxAs/InP structures with complementary gallium contents as low as xGa = 0.07 and xGa = 0.11 are reported. The sample quality appears independent of the number of quantum wells stacked in the structure. With decreasing gallium content, a decrease in luminescence intensity is observed, which is related to an increase in the number of non-radiative recombination centres with respect to lattice-matched samples. KW - Photolumineszenzspektroskopie KW - Indiumarsenid KW - Galliumarsenid KW - Indiumphosphid Y1 - 1991 VL - 9 IS - 1–3 SP - 297 EP - 300 ER - TY - CHAP A1 - Mahlzahn, Erik A1 - Heuken, Michael A1 - Grützmacher, Detlev A1 - Stollenwerk, Manfred A1 - Heime, Klaus T1 - Advanced InGaAs/InP p-type sydomorphic MODFET T2 - Proceedings of the SPIE KW - Indiumarsenid KW - Galliumarsenid KW - Indiumphosphid Y1 - 1991 VL - 1362 SP - 199 EP - 204 ER - TY - CHAP A1 - Glade, M. A1 - Hergeth, J. A1 - Stollenwerk, Manfred A1 - Grützmacher, Detlev A1 - Balk, Peter T1 - Effects of zinc diffusion during MOPVE on performance of InP/InGaAsP double heterostructure lasers T2 - Proceedings of the 17th International Symposium of GaAs and related Compounds, Jersey, UK KW - Indiumphosphid KW - Indiumarsenid KW - Galliumarsenid Y1 - 1990 SP - 579 EP - 584 ER -