TY - JOUR A1 - Wolter, Karl A1 - Schwedler, Ralf A1 - Gallmann, B. A1 - Jaekel, Christian A1 - Stollenwerk, Manfred A1 - Camassel, Jean A1 - Laurenti, Jean Pierre T1 - Optical characterization of strained InGaAs/InP quantum well structures JF - Microelectronic Engineering N2 - The effects of strain on the optical properties ofmultiple-quantum well structures grown by low pressure metal organic vapor phase epitaxy have been investigated by photoluminescence spectroscopy. The investigated composition range is varied between 0.17 ≤ xGa ≤ 1.00. Sputtered neutrals mass spectroscopy has been used to calibrate the growth interpolated nominal compositions. Distinct peaks from monolayer variations of well thickness are observed from all samples. The analysis of the PL-spectra leads to the assumption of an intermediate layer of InAs0.65P0.35 at the InP to In1−ϰGaχAs(lower) interface. KW - Indiumarsenid KW - Galliumarsenid Y1 - 1991 VL - 15 IS - 1–4 SP - 593 EP - 596 ER -