TY - JOUR A1 - Schwedler, Ralf A1 - Wolter, Karl A1 - Gallmann, B. A1 - Grützmacher, Detlev A1 - Stollenwerk, Manfred A1 - Kurz, H. T1 - Optical characterization of In-rich strained In1-xGaxAs/InP single- and multiple-quantum-wells JF - Materials Science and Engineering: B N2 - We report on the photoluminescence spectroscopy of a large set of strained In1−xGaxAs/InP quantum well structures grown by low pressure metallo-organic vapour phase epitaxy. Distinct peaks from monolayer steps are observed in all samples. For the first time, data on indium-rich In1−xGaxAs/InP structures with complementary gallium contents as low as xGa = 0.07 and xGa = 0.11 are reported. The sample quality appears independent of the number of quantum wells stacked in the structure. With decreasing gallium content, a decrease in luminescence intensity is observed, which is related to an increase in the number of non-radiative recombination centres with respect to lattice-matched samples. KW - Photolumineszenzspektroskopie KW - Indiumarsenid KW - Galliumarsenid KW - Indiumphosphid Y1 - 1991 VL - 9 IS - 1–3 SP - 297 EP - 300 ER -