TY - JOUR A1 - Oschinowo, John A1 - Forchel, Alfred A1 - Grützmacher, Detlev A1 - Stollenwerk, Manfred A1 - Heuken, Michael A1 - Heime, Klaus T1 - Photoluminescence study of interdiffusion in In0,53Ga0,47/As/InP surface quantum wells JF - Applied Physics Letters N2 - We have investigated the thermal stability and interdiffusion of In0.53Ga0.47As/InP surface quantum wells. In these structures the optically active InGaAs layer is bounded on one side by vacuum and on the other side by InP. We obtain well‐defined photoluminescence emission spectra with high intensity. After rapid thermal annealing at temperatures between 500 and 900 °C (annealing time 1 min) we observe strong emission energy shifts of up to 316 meV. By using a simple model of ion intermixing we estimate large interdiffusion coefficients (e.g., 1.7×10−14 cm2 s−1 for T=900 °C) and an activation energy of 1.3 eV for the surface quantum wells. KW - Photolumineszenz Y1 - 1992 VL - 60 IS - 21 SP - 2660 EP - 2662 ER - TY - JOUR A1 - Shi, Chang-Xin A1 - Grützmacher, Detlev A1 - Stollenwerk, Manfred A1 - Wang, Qing-Kang A1 - Heime, Klaus T1 - High-performance undoped InP/n-InP/GaAs MSM photodetectors grown by LP-MOVPE JF - IEEE Transactions on Electron Devices KW - Indiumarsenid KW - Galliumarsenid Y1 - 1992 VL - 39 IS - 5 SP - 1028 EP - 1031 PB - IEEE ER - TY - CHAP A1 - Mahlzahn, Erik A1 - Heuken, Michael A1 - Grützmacher, Detlev A1 - Stollenwerk, Manfred A1 - Heime, Klaus T1 - Advanced InGaAs/InP p-type sydomorphic MODFET T2 - Proceedings of the SPIE KW - Indiumarsenid KW - Galliumarsenid KW - Indiumphosphid Y1 - 1991 VL - 1362 SP - 199 EP - 204 ER - TY - CHAP A1 - Mahlzahn, Erik A1 - Heuken, Michael A1 - Grützmacher, Detlev A1 - Stollenwerk, Manfred A1 - Heime, Klaus T1 - High mobility and high sheet density p-type pseudomorphic MODFET T2 - Proceedings of the 17th International Symposium of GaAs and related Compounds, Jersey, UK KW - HEMT Y1 - 1990 SP - 579 EP - 584 ER - TY - CHAP A1 - Stollenwerk, Manfred A1 - Grützmacher, Detlev A1 - Heime, Klaus A1 - Möhrle, Martin A1 - Fidorra, Frank T1 - GaInAs/GaInAsP SC-MQW Laser mit einer Emissionswellenlänge von 1,35 µm deponiert mit Hilfe der LP-MOVPE KW - Quantenwell-Laser KW - Galliumarsenid KW - Indiumarsenid Y1 - 1991 N1 - Beitrag zum Kolloquium “Photonische Komponenten“, Universität Ulm, April 1991 ER - TY - CHAP A1 - Stollenwerk, Manfred A1 - Grützmacher, Detlev A1 - Schwedler, Ralf A1 - Meyer, R. A1 - Hardtdegen, Hilde A1 - Kux, A. A1 - Heime, Klaus T1 - Systematic study of strained GaInAs/InP grown by MOVPE KW - Galliumarsenid KW - Indiumarsenid Y1 - 1991 N1 - 4th European workshop on metallorganic vapour phase epitaxy, Nijmegen, NL, 1991 ER -