TY - JOUR A1 - Oschinowo, John A1 - Forchel, Alfred A1 - Grützmacher, Detlev A1 - Stollenwerk, Manfred A1 - Heuken, Michael A1 - Heime, Klaus T1 - Photoluminescence study of interdiffusion in In0,53Ga0,47/As/InP surface quantum wells JF - Applied Physics Letters N2 - We have investigated the thermal stability and interdiffusion of In0.53Ga0.47As/InP surface quantum wells. In these structures the optically active InGaAs layer is bounded on one side by vacuum and on the other side by InP. We obtain well‐defined photoluminescence emission spectra with high intensity. After rapid thermal annealing at temperatures between 500 and 900 °C (annealing time 1 min) we observe strong emission energy shifts of up to 316 meV. By using a simple model of ion intermixing we estimate large interdiffusion coefficients (e.g., 1.7×10−14 cm2 s−1 for T=900 °C) and an activation energy of 1.3 eV for the surface quantum wells. KW - Photolumineszenz Y1 - 1992 VL - 60 IS - 21 SP - 2660 EP - 2662 ER - TY - CHAP A1 - Oschinowo, John A1 - Forchel, Alfred A1 - Grützmacher, Detlev A1 - Stollenwerk, Manfred T1 - RTA study of thermal stability and interdiffusion of InGaAs/InP quantum wells - the influence of InGaAs cap layers T2 - Third International Conference Indium Phosphide and Related Materials Cardiff/Wales N2 - A study of the thermal stability of InGaAs/InP quantum wells with different top barrier compositions that used rapid thermal annealing at temperatures between 600 degrees C and 950 degrees C (annealing time 1 min) is discussed. The thermal interdiffusion effects were evaluated by photoluminescence spectroscopy. From the temperature dependence of the luminescence energy shifts the interdiffusion coefficients and activation energies are determined. KW - Photolumineszenzspektroskopie KW - Indiumarsenid KW - Galliumarsenid KW - Indiumphosphid Y1 - 1991 SP - 606 EP - 609 ER - TY - JOUR A1 - Shi, Chang-Xin A1 - Grützmacher, Detlev A1 - Stollenwerk, Manfred A1 - Wang, Qing-Kang A1 - Heime, Klaus T1 - High-performance undoped InP/n-InP/GaAs MSM photodetectors grown by LP-MOVPE JF - IEEE Transactions on Electron Devices KW - Indiumarsenid KW - Galliumarsenid Y1 - 1992 VL - 39 IS - 5 SP - 1028 EP - 1031 PB - IEEE ER - TY - JOUR A1 - Meyer, R. A1 - Hardtdegen, Hilde A1 - Grützmacher, Detlev A1 - Carius, R. A1 - Stollenwerk, Manfred A1 - Balk, Peter T1 - Optical and structural properties of MOVPE grown GaxIn1-xAs/InP strained multiple quantum well structures JF - Journal of Electronic Materials N2 - This paper presents a study of the structural and optical properties of strained GaInAs/ InP multiple quantum well (MQW) structures fabricated by LP-MOVPE. The composition of the Ga x In1−x As films ranged fromx = 0.17 tox = 1.0 and was determined by sputtered neutral mass spectrometry (SNMS) on thick layers. The structures of the MQW samples with well widths from 1.5 to 5 nm were investigated by high resolution x-ray diffraction (HR-XRD). Simulations of the diffraction patterns showed that transition layers of approximately 2 monolayer (ML) thickness with high lattice mismatch exist at the interfaces. Photoluminescence (PL) measurements indicate well widths of a multiple of a monolayer with local variations of one monolayer. The PL peak energies vary smoothly with the Ga concentration. These results were confirmed by optical absorption measurements. KW - Galliumarsenid KW - Indiumarsenid KW - Indiumphosphid Y1 - 1992 VL - 21 IS - 3 SP - 293 EP - 298 ER - TY - JOUR A1 - Oschinowo, John A1 - Forchel, Alfred A1 - Dreybrodt, Jörg A1 - Emmerling, Monika A1 - Gyuro, Imre A1 - Speier, Peter A1 - Grützmacher, Detlev A1 - Stollenwerk, Manfred T1 - Lateral thermal stability modulation for the definition of InGaAs/InP wires JF - Microelectronic Engineering N2 - We have investigated a novel technique for the definition of semiconductor wires. By the selective local removal of the InP top barrier layer wire patterns in which the top material varies between InP and InGaAs are formed from an InGaAs/InP quantum well. In a subsequent annealing step the top InGaAs layer shows substantially stronger interdiffusion than the InP covered regions (wires). By using luminescence spectroscopy we show that this defectfree enhanced interdiffusion can be used to obtain a lateral energy barrier. KW - Indiumarsenid KW - Galliumarsenid Y1 - 1992 VL - 17 IS - 1–4 SP - 505 EP - 508 ER - TY - JOUR A1 - Schwedler, Ralf A1 - Wolter, Karl A1 - Gallmann, B. A1 - Grützmacher, Detlev A1 - Stollenwerk, Manfred A1 - Kurz, H. T1 - Optical characterization of In-rich strained In1-xGaxAs/InP single- and multiple-quantum-wells JF - Materials Science and Engineering: B N2 - We report on the photoluminescence spectroscopy of a large set of strained In1−xGaxAs/InP quantum well structures grown by low pressure metallo-organic vapour phase epitaxy. Distinct peaks from monolayer steps are observed in all samples. For the first time, data on indium-rich In1−xGaxAs/InP structures with complementary gallium contents as low as xGa = 0.07 and xGa = 0.11 are reported. The sample quality appears independent of the number of quantum wells stacked in the structure. With decreasing gallium content, a decrease in luminescence intensity is observed, which is related to an increase in the number of non-radiative recombination centres with respect to lattice-matched samples. KW - Photolumineszenzspektroskopie KW - Indiumarsenid KW - Galliumarsenid KW - Indiumphosphid Y1 - 1991 VL - 9 IS - 1–3 SP - 297 EP - 300 ER - TY - CHAP A1 - Mahlzahn, Erik A1 - Heuken, Michael A1 - Grützmacher, Detlev A1 - Stollenwerk, Manfred A1 - Heime, Klaus T1 - Advanced InGaAs/InP p-type sydomorphic MODFET T2 - Proceedings of the SPIE KW - Indiumarsenid KW - Galliumarsenid KW - Indiumphosphid Y1 - 1991 VL - 1362 SP - 199 EP - 204 ER - TY - CHAP A1 - Glade, M. A1 - Hergeth, J. A1 - Stollenwerk, Manfred A1 - Grützmacher, Detlev A1 - Balk, Peter T1 - Effects of zinc diffusion during MOPVE on performance of InP/InGaAsP double heterostructure lasers T2 - Proceedings of the 17th International Symposium of GaAs and related Compounds, Jersey, UK KW - Indiumphosphid KW - Indiumarsenid KW - Galliumarsenid Y1 - 1990 SP - 579 EP - 584 ER - TY - CHAP A1 - Mahlzahn, Erik A1 - Heuken, Michael A1 - Grützmacher, Detlev A1 - Stollenwerk, Manfred A1 - Heime, Klaus T1 - High mobility and high sheet density p-type pseudomorphic MODFET T2 - Proceedings of the 17th International Symposium of GaAs and related Compounds, Jersey, UK KW - HEMT Y1 - 1990 SP - 579 EP - 584 ER - TY - JOUR A1 - Stollenwerk, Manfred A1 - Grützmacher, Detlev T1 - GaInAs/GaInAsP SC-MQW-laser emitting at 1.35 µm grown by LP-MOVPE JF - Microelectronic Engineering KW - Quantenwell-Laser KW - Galliumarsenid KW - Indiumarsenid Y1 - 1991 VL - 1991 IS - 15 SP - 263 EP - 266 ER -