<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>1370</id>
    <completedYear>1992</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1028</pageFirst>
    <pageLast>1031</pageLast>
    <pageNumber/>
    <edition/>
    <issue>5</issue>
    <volume>39</volume>
    <type>article</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-10-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">High-performance undoped InP/n-InP/GaAs MSM photodetectors grown by LP-MOVPE</title>
    <parentTitle language="eng">IEEE Transactions on Electron Devices</parentTitle>
    <enrichment key="copyright">0</enrichment>
    <licence>Keine Lizenz - es gilt das deutsche Urheberrecht</licence>
    <author>Chang-Xin Shi</author>
    <author>Detlev Grützmacher</author>
    <author>Manfred Stollenwerk</author>
    <author>Qing-Kang Wang</author>
    <author>Klaus Heime</author>
    <subject>
      <language>deu</language>
      <type>swd</type>
      <value>Indiumarsenid</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>swd</type>
      <value>Galliumarsenid</value>
    </subject>
    <collection role="forschungsschwerpunkte" number="">Innovative Material Processing</collection>
    <collection role="forschungsschwerpunkte" number="">Material Testing &amp; Sensor Technology</collection>
  </doc>
</export-example>
