<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>1376</id>
    <completedYear>1990</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>579</pageFirst>
    <pageLast>584</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-10-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Effects of zinc diffusion during MOPVE on performance of InP/InGaAsP double heterostructure lasers</title>
    <parentTitle language="deu">Proceedings of the 17th International Symposium of GaAs and related Compounds, Jersey, UK</parentTitle>
    <enrichment key="copyright">0</enrichment>
    <licence>Keine Lizenz - es gilt das deutsche Urheberrecht</licence>
    <author>M. Glade</author>
    <author>J. Hergeth</author>
    <author>Manfred Stollenwerk</author>
    <author>Detlev Grützmacher</author>
    <author>Peter Balk</author>
    <subject>
      <language>deu</language>
      <type>swd</type>
      <value>Indiumphosphid</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>swd</type>
      <value>Indiumarsenid</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>swd</type>
      <value>Galliumarsenid</value>
    </subject>
    <collection role="forschungsschwerpunkte" number="">Innovative Material Processing</collection>
    <collection role="forschungsschwerpunkte" number="">Material Testing &amp; Sensor Technology</collection>
  </doc>
  <doc>
    <id>1371</id>
    <completedYear>1992</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>293</pageFirst>
    <pageLast>298</pageLast>
    <pageNumber/>
    <edition/>
    <issue>3</issue>
    <volume>21</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2019-10-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Optical and structural properties of MOVPE grown  GaxIn1-xAs/InP strained multiple quantum well structures</title>
    <abstract language="eng">This paper presents a study of the structural and optical properties of strained GaInAs/ InP multiple quantum well (MQW) structures fabricated by LP-MOVPE. The composition of the Ga x In1−x As films ranged fromx = 0.17 tox = 1.0 and was determined by sputtered neutral mass spectrometry (SNMS) on thick layers. The structures of the MQW samples with well widths from 1.5 to 5 nm were investigated by high resolution x-ray diffraction (HR-XRD). Simulations of the diffraction patterns showed that transition layers of approximately 2 monolayer (ML) thickness with high lattice mismatch exist at the interfaces. Photoluminescence (PL) measurements indicate well widths of a multiple of a monolayer with local variations of one monolayer. The PL peak energies vary smoothly with the Ga concentration. These results were confirmed by optical absorption measurements.</abstract>
    <parentTitle language="eng">Journal of Electronic Materials</parentTitle>
    <enrichment key="copyright">0</enrichment>
    <licence>Keine Lizenz - es gilt das deutsche Urheberrecht</licence>
    <author>R. Meyer</author>
    <author>Hilde Hardtdegen</author>
    <author>Detlev Grützmacher</author>
    <author>R. Carius</author>
    <author>Manfred Stollenwerk</author>
    <author>Peter Balk</author>
    <subject>
      <language>deu</language>
      <type>swd</type>
      <value>Galliumarsenid</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>swd</type>
      <value>Indiumarsenid</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>swd</type>
      <value>Indiumphosphid</value>
    </subject>
    <collection role="forschungsschwerpunkte" number="">Innovative Material Processing</collection>
    <collection role="forschungsschwerpunkte" number="">Material Testing &amp; Sensor Technology</collection>
  </doc>
</export-example>
