@article{SchwedlerWolterGallmannetal.1991, author = {Schwedler, Ralf and Wolter, Karl and Gallmann, B. and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred and Kurz, H.}, title = {Optical characterization of In-rich strained In1-xGaxAs/InP single- and multiple-quantum-wells}, series = {Materials Science and Engineering: B}, volume = {9}, journal = {Materials Science and Engineering: B}, number = {1-3}, pages = {297 -- 300}, year = {1991}, abstract = {We report on the photoluminescence spectroscopy of a large set of strained In1-xGaxAs/InP quantum well structures grown by low pressure metallo-organic vapour phase epitaxy. Distinct peaks from monolayer steps are observed in all samples. For the first time, data on indium-rich In1-xGaxAs/InP structures with complementary gallium contents as low as xGa = 0.07 and xGa = 0.11 are reported. The sample quality appears independent of the number of quantum wells stacked in the structure. With decreasing gallium content, a decrease in luminescence intensity is observed, which is related to an increase in the number of non-radiative recombination centres with respect to lattice-matched samples.}, subject = {Photolumineszenzspektroskopie}, language = {en} }