@article{OschinowoForchelGruetzmacheretal.1992, author = {Oschinowo, John and Forchel, Alfred and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred and Heuken, Michael and Heime, Klaus}, title = {Photoluminescence study of interdiffusion in In0,53Ga0,47/As/InP surface quantum wells}, series = {Applied Physics Letters}, volume = {60}, journal = {Applied Physics Letters}, number = {21}, pages = {2660 -- 2662}, year = {1992}, abstract = {We have investigated the thermal stability and interdiffusion of In0.53Ga0.47As/InP surface quantum wells. In these structures the optically active InGaAs layer is bounded on one side by vacuum and on the other side by InP. We obtain well-defined photoluminescence emission spectra with high intensity. After rapid thermal annealing at temperatures between 500 and 900 °C (annealing time 1 min) we observe strong emission energy shifts of up to 316 meV. By using a simple model of ion intermixing we estimate large interdiffusion coefficients (e.g., 1.7×10-14 cm2 s-1 for T=900 °C) and an activation energy of 1.3 eV for the surface quantum wells.}, subject = {Photolumineszenz}, language = {en} } @article{ShiGruetzmacherStollenwerketal.1992, author = {Shi, Chang-Xin and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred and Wang, Qing-Kang and Heime, Klaus}, title = {High-performance undoped InP/n-InP/GaAs MSM photodetectors grown by LP-MOVPE}, series = {IEEE Transactions on Electron Devices}, volume = {39}, journal = {IEEE Transactions on Electron Devices}, number = {5}, publisher = {IEEE}, pages = {1028 -- 1031}, year = {1992}, subject = {Indiumarsenid}, language = {en} } @inproceedings{MahlzahnHeukenGruetzmacheretal.1991, author = {Mahlzahn, Erik and Heuken, Michael and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred and Heime, Klaus}, title = {Advanced InGaAs/InP p-type sydomorphic MODFET}, series = {Proceedings of the SPIE}, volume = {1362}, booktitle = {Proceedings of the SPIE}, pages = {199 -- 204}, year = {1991}, subject = {Indiumarsenid}, language = {en} } @inproceedings{MahlzahnHeukenGruetzmacheretal.1990, author = {Mahlzahn, Erik and Heuken, Michael and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred and Heime, Klaus}, title = {High mobility and high sheet density p-type pseudomorphic MODFET}, series = {Proceedings of the 17th International Symposium of GaAs and related Compounds, Jersey, UK}, booktitle = {Proceedings of the 17th International Symposium of GaAs and related Compounds, Jersey, UK}, pages = {579 -- 584}, year = {1990}, subject = {HEMT}, language = {en} } @inproceedings{StollenwerkGruetzmacherHeimeetal.1991, author = {Stollenwerk, Manfred and Gr{\"u}tzmacher, Detlev and Heime, Klaus and M{\"o}hrle, Martin and Fidorra, Frank}, title = {GaInAs/GaInAsP SC-MQW Laser mit einer Emissionswellenl{\"a}nge von 1,35 µm deponiert mit Hilfe der LP-MOVPE}, year = {1991}, subject = {Quantenwell-Laser}, language = {de} } @inproceedings{StollenwerkGruetzmacherSchwedleretal.1991, author = {Stollenwerk, Manfred and Gr{\"u}tzmacher, Detlev and Schwedler, Ralf and Meyer, R. and Hardtdegen, Hilde and Kux, A. and Heime, Klaus}, title = {Systematic study of strained GaInAs/InP grown by MOVPE}, year = {1991}, subject = {Galliumarsenid}, language = {en} }