@article{OschinowoForchelGruetzmacheretal.1992, author = {Oschinowo, John and Forchel, Alfred and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred and Heuken, Michael and Heime, Klaus}, title = {Photoluminescence study of interdiffusion in In0,53Ga0,47/As/InP surface quantum wells}, series = {Applied Physics Letters}, volume = {60}, journal = {Applied Physics Letters}, number = {21}, pages = {2660 -- 2662}, year = {1992}, abstract = {We have investigated the thermal stability and interdiffusion of In0.53Ga0.47As/InP surface quantum wells. In these structures the optically active InGaAs layer is bounded on one side by vacuum and on the other side by InP. We obtain well-defined photoluminescence emission spectra with high intensity. After rapid thermal annealing at temperatures between 500 and 900 °C (annealing time 1 min) we observe strong emission energy shifts of up to 316 meV. By using a simple model of ion intermixing we estimate large interdiffusion coefficients (e.g., 1.7×10-14 cm2 s-1 for T=900 °C) and an activation energy of 1.3 eV for the surface quantum wells.}, subject = {Photolumineszenz}, language = {en} } @inproceedings{OschinowoForchelGruetzmacheretal.1991, author = {Oschinowo, John and Forchel, Alfred and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred}, title = {RTA study of thermal stability and interdiffusion of InGaAs/InP quantum wells - the influence of InGaAs cap layers}, series = {Third International Conference Indium Phosphide and Related Materials Cardiff/Wales}, booktitle = {Third International Conference Indium Phosphide and Related Materials Cardiff/Wales}, pages = {606 -- 609}, year = {1991}, abstract = {A study of the thermal stability of InGaAs/InP quantum wells with different top barrier compositions that used rapid thermal annealing at temperatures between 600 degrees C and 950 degrees C (annealing time 1 min) is discussed. The thermal interdiffusion effects were evaluated by photoluminescence spectroscopy. From the temperature dependence of the luminescence energy shifts the interdiffusion coefficients and activation energies are determined.}, subject = {Photolumineszenzspektroskopie}, language = {en} } @article{ShiGruetzmacherStollenwerketal.1992, author = {Shi, Chang-Xin and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred and Wang, Qing-Kang and Heime, Klaus}, title = {High-performance undoped InP/n-InP/GaAs MSM photodetectors grown by LP-MOVPE}, series = {IEEE Transactions on Electron Devices}, volume = {39}, journal = {IEEE Transactions on Electron Devices}, number = {5}, publisher = {IEEE}, pages = {1028 -- 1031}, year = {1992}, subject = {Indiumarsenid}, language = {en} } @article{MeyerHardtdegenGruetzmacheretal.1992, author = {Meyer, R. and Hardtdegen, Hilde and Gr{\"u}tzmacher, Detlev and Carius, R. and Stollenwerk, Manfred and Balk, Peter}, title = {Optical and structural properties of MOVPE grown GaxIn1-xAs/InP strained multiple quantum well structures}, series = {Journal of Electronic Materials}, volume = {21}, journal = {Journal of Electronic Materials}, number = {3}, pages = {293 -- 298}, year = {1992}, abstract = {This paper presents a study of the structural and optical properties of strained GaInAs/ InP multiple quantum well (MQW) structures fabricated by LP-MOVPE. The composition of the Ga x In1-x As films ranged fromx = 0.17 tox = 1.0 and was determined by sputtered neutral mass spectrometry (SNMS) on thick layers. The structures of the MQW samples with well widths from 1.5 to 5 nm were investigated by high resolution x-ray diffraction (HR-XRD). Simulations of the diffraction patterns showed that transition layers of approximately 2 monolayer (ML) thickness with high lattice mismatch exist at the interfaces. Photoluminescence (PL) measurements indicate well widths of a multiple of a monolayer with local variations of one monolayer. The PL peak energies vary smoothly with the Ga concentration. These results were confirmed by optical absorption measurements.}, subject = {Galliumarsenid}, language = {en} } @article{OschinowoForchelDreybrodtetal.1992, author = {Oschinowo, John and Forchel, Alfred and Dreybrodt, J{\"o}rg and Emmerling, Monika and Gyuro, Imre and Speier, Peter and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred}, title = {Lateral thermal stability modulation for the definition of InGaAs/InP wires}, series = {Microelectronic Engineering}, volume = {17}, journal = {Microelectronic Engineering}, number = {1-4}, pages = {505 -- 508}, year = {1992}, abstract = {We have investigated a novel technique for the definition of semiconductor wires. By the selective local removal of the InP top barrier layer wire patterns in which the top material varies between InP and InGaAs are formed from an InGaAs/InP quantum well. In a subsequent annealing step the top InGaAs layer shows substantially stronger interdiffusion than the InP covered regions (wires). By using luminescence spectroscopy we show that this defectfree enhanced interdiffusion can be used to obtain a lateral energy barrier.}, subject = {Indiumarsenid}, language = {en} } @article{SchwedlerWolterGallmannetal.1991, author = {Schwedler, Ralf and Wolter, Karl and Gallmann, B. and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred and Kurz, H.}, title = {Optical characterization of In-rich strained In1-xGaxAs/InP single- and multiple-quantum-wells}, series = {Materials Science and Engineering: B}, volume = {9}, journal = {Materials Science and Engineering: B}, number = {1-3}, pages = {297 -- 300}, year = {1991}, abstract = {We report on the photoluminescence spectroscopy of a large set of strained In1-xGaxAs/InP quantum well structures grown by low pressure metallo-organic vapour phase epitaxy. Distinct peaks from monolayer steps are observed in all samples. For the first time, data on indium-rich In1-xGaxAs/InP structures with complementary gallium contents as low as xGa = 0.07 and xGa = 0.11 are reported. The sample quality appears independent of the number of quantum wells stacked in the structure. With decreasing gallium content, a decrease in luminescence intensity is observed, which is related to an increase in the number of non-radiative recombination centres with respect to lattice-matched samples.}, subject = {Photolumineszenzspektroskopie}, language = {en} } @inproceedings{MahlzahnHeukenGruetzmacheretal.1991, author = {Mahlzahn, Erik and Heuken, Michael and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred and Heime, Klaus}, title = {Advanced InGaAs/InP p-type sydomorphic MODFET}, series = {Proceedings of the SPIE}, volume = {1362}, booktitle = {Proceedings of the SPIE}, pages = {199 -- 204}, year = {1991}, subject = {Indiumarsenid}, language = {en} } @inproceedings{GladeHergethStollenwerketal.1990, author = {Glade, M. and Hergeth, J. and Stollenwerk, Manfred and Gr{\"u}tzmacher, Detlev and Balk, Peter}, title = {Effects of zinc diffusion during MOPVE on performance of InP/InGaAsP double heterostructure lasers}, series = {Proceedings of the 17th International Symposium of GaAs and related Compounds, Jersey, UK}, booktitle = {Proceedings of the 17th International Symposium of GaAs and related Compounds, Jersey, UK}, pages = {579 -- 584}, year = {1990}, subject = {Indiumphosphid}, language = {en} } @inproceedings{MahlzahnHeukenGruetzmacheretal.1990, author = {Mahlzahn, Erik and Heuken, Michael and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred and Heime, Klaus}, title = {High mobility and high sheet density p-type pseudomorphic MODFET}, series = {Proceedings of the 17th International Symposium of GaAs and related Compounds, Jersey, UK}, booktitle = {Proceedings of the 17th International Symposium of GaAs and related Compounds, Jersey, UK}, pages = {579 -- 584}, year = {1990}, subject = {HEMT}, language = {en} } @article{StollenwerkGruetzmacher1991, author = {Stollenwerk, Manfred and Gr{\"u}tzmacher, Detlev}, title = {GaInAs/GaInAsP SC-MQW-laser emitting at 1.35 µm grown by LP-MOVPE}, series = {Microelectronic Engineering}, volume = {1991}, journal = {Microelectronic Engineering}, number = {15}, pages = {263 -- 266}, year = {1991}, subject = {Quantenwell-Laser}, language = {en} }