@article{OschinowoForchelGruetzmacheretal.1992, author = {Oschinowo, John and Forchel, Alfred and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred and Heuken, Michael and Heime, Klaus}, title = {Photoluminescence study of interdiffusion in In0,53Ga0,47/As/InP surface quantum wells}, series = {Applied Physics Letters}, volume = {60}, journal = {Applied Physics Letters}, number = {21}, pages = {2660 -- 2662}, year = {1992}, abstract = {We have investigated the thermal stability and interdiffusion of In0.53Ga0.47As/InP surface quantum wells. In these structures the optically active InGaAs layer is bounded on one side by vacuum and on the other side by InP. We obtain well-defined photoluminescence emission spectra with high intensity. After rapid thermal annealing at temperatures between 500 and 900 °C (annealing time 1 min) we observe strong emission energy shifts of up to 316 meV. By using a simple model of ion intermixing we estimate large interdiffusion coefficients (e.g., 1.7×10-14 cm2 s-1 for T=900 °C) and an activation energy of 1.3 eV for the surface quantum wells.}, subject = {Photolumineszenz}, language = {en} } @inproceedings{OschinowoForchelGruetzmacheretal.1991, author = {Oschinowo, John and Forchel, Alfred and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred}, title = {RTA study of thermal stability and interdiffusion of InGaAs/InP quantum wells - the influence of InGaAs cap layers}, series = {Third International Conference Indium Phosphide and Related Materials Cardiff/Wales}, booktitle = {Third International Conference Indium Phosphide and Related Materials Cardiff/Wales}, pages = {606 -- 609}, year = {1991}, abstract = {A study of the thermal stability of InGaAs/InP quantum wells with different top barrier compositions that used rapid thermal annealing at temperatures between 600 degrees C and 950 degrees C (annealing time 1 min) is discussed. The thermal interdiffusion effects were evaluated by photoluminescence spectroscopy. From the temperature dependence of the luminescence energy shifts the interdiffusion coefficients and activation energies are determined.}, subject = {Photolumineszenzspektroskopie}, language = {en} } @article{OschinowoForchelDreybrodtetal.1992, author = {Oschinowo, John and Forchel, Alfred and Dreybrodt, J{\"o}rg and Emmerling, Monika and Gyuro, Imre and Speier, Peter and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred}, title = {Lateral thermal stability modulation for the definition of InGaAs/InP wires}, series = {Microelectronic Engineering}, volume = {17}, journal = {Microelectronic Engineering}, number = {1-4}, pages = {505 -- 508}, year = {1992}, abstract = {We have investigated a novel technique for the definition of semiconductor wires. By the selective local removal of the InP top barrier layer wire patterns in which the top material varies between InP and InGaAs are formed from an InGaAs/InP quantum well. In a subsequent annealing step the top InGaAs layer shows substantially stronger interdiffusion than the InP covered regions (wires). By using luminescence spectroscopy we show that this defectfree enhanced interdiffusion can be used to obtain a lateral energy barrier.}, subject = {Indiumarsenid}, language = {en} }