@article{OschinowoForchelGruetzmacheretal.1992, author = {Oschinowo, John and Forchel, Alfred and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred and Heuken, Michael and Heime, Klaus}, title = {Photoluminescence study of interdiffusion in In0,53Ga0,47/As/InP surface quantum wells}, series = {Applied Physics Letters}, volume = {60}, journal = {Applied Physics Letters}, number = {21}, pages = {2660 -- 2662}, year = {1992}, abstract = {We have investigated the thermal stability and interdiffusion of In0.53Ga0.47As/InP surface quantum wells. In these structures the optically active InGaAs layer is bounded on one side by vacuum and on the other side by InP. We obtain well-defined photoluminescence emission spectra with high intensity. After rapid thermal annealing at temperatures between 500 and 900 °C (annealing time 1 min) we observe strong emission energy shifts of up to 316 meV. By using a simple model of ion intermixing we estimate large interdiffusion coefficients (e.g., 1.7×10-14 cm2 s-1 for T=900 °C) and an activation energy of 1.3 eV for the surface quantum wells.}, subject = {Photolumineszenz}, language = {en} }