@article{MeyerHardtdegenGruetzmacheretal.1992, author = {Meyer, R. and Hardtdegen, Hilde and Gr{\"u}tzmacher, Detlev and Carius, R. and Stollenwerk, Manfred and Balk, Peter}, title = {Optical and structural properties of MOVPE grown GaxIn1-xAs/InP strained multiple quantum well structures}, series = {Journal of Electronic Materials}, volume = {21}, journal = {Journal of Electronic Materials}, number = {3}, pages = {293 -- 298}, year = {1992}, abstract = {This paper presents a study of the structural and optical properties of strained GaInAs/ InP multiple quantum well (MQW) structures fabricated by LP-MOVPE. The composition of the Ga x In1-x As films ranged fromx = 0.17 tox = 1.0 and was determined by sputtered neutral mass spectrometry (SNMS) on thick layers. The structures of the MQW samples with well widths from 1.5 to 5 nm were investigated by high resolution x-ray diffraction (HR-XRD). Simulations of the diffraction patterns showed that transition layers of approximately 2 monolayer (ML) thickness with high lattice mismatch exist at the interfaces. Photoluminescence (PL) measurements indicate well widths of a multiple of a monolayer with local variations of one monolayer. The PL peak energies vary smoothly with the Ga concentration. These results were confirmed by optical absorption measurements.}, subject = {Galliumarsenid}, language = {en} }