@article{BoeweringDoehringGaerneretal.1991, author = {B{\"o}wering, Norbert and D{\"o}hring, Thorsten and G{\"a}rner, Ulrich and Heinzmann, Ulrich}, title = {Spectral diagnosis of a laser-produced XUV source using a digital camera system with pinhole transmission grating}, series = {Laser and Particle Beams}, volume = {9}, journal = {Laser and Particle Beams}, number = {2}, pages = {593 -- 601}, year = {1991}, subject = {Extremes Ultraviolett}, language = {en} } @inproceedings{OschinowoForchelGruetzmacheretal.1991, author = {Oschinowo, John and Forchel, Alfred and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred}, title = {RTA study of thermal stability and interdiffusion of InGaAs/InP quantum wells - the influence of InGaAs cap layers}, series = {Third International Conference Indium Phosphide and Related Materials Cardiff/Wales}, booktitle = {Third International Conference Indium Phosphide and Related Materials Cardiff/Wales}, pages = {606 -- 609}, year = {1991}, abstract = {A study of the thermal stability of InGaAs/InP quantum wells with different top barrier compositions that used rapid thermal annealing at temperatures between 600 degrees C and 950 degrees C (annealing time 1 min) is discussed. The thermal interdiffusion effects were evaluated by photoluminescence spectroscopy. From the temperature dependence of the luminescence energy shifts the interdiffusion coefficients and activation energies are determined.}, subject = {Photolumineszenzspektroskopie}, language = {en} } @article{WolterSchwedlerGallmannetal.1991, author = {Wolter, Karl and Schwedler, Ralf and Gallmann, B. and Jaekel, Christian and Stollenwerk, Manfred and Camassel, Jean and Laurenti, Jean Pierre}, title = {Optical characterization of strained InGaAs/InP quantum well structures}, series = {Microelectronic Engineering}, volume = {15}, journal = {Microelectronic Engineering}, number = {1-4}, pages = {593 -- 596}, year = {1991}, abstract = {The effects of strain on the optical properties ofmultiple-quantum well structures grown by low pressure metal organic vapor phase epitaxy have been investigated by photoluminescence spectroscopy. The investigated composition range is varied between 0.17 ≤ xGa ≤ 1.00. Sputtered neutrals mass spectroscopy has been used to calibrate the growth interpolated nominal compositions. Distinct peaks from monolayer variations of well thickness are observed from all samples. The analysis of the PL-spectra leads to the assumption of an intermediate layer of InAs0.65P0.35 at the InP to In1-ϰGaχAs(lower) interface.}, subject = {Indiumarsenid}, language = {en} } @article{SchwedlerWolterGallmannetal.1991, author = {Schwedler, Ralf and Wolter, Karl and Gallmann, B. and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred and Kurz, H.}, title = {Optical characterization of In-rich strained In1-xGaxAs/InP single- and multiple-quantum-wells}, series = {Materials Science and Engineering: B}, volume = {9}, journal = {Materials Science and Engineering: B}, number = {1-3}, pages = {297 -- 300}, year = {1991}, abstract = {We report on the photoluminescence spectroscopy of a large set of strained In1-xGaxAs/InP quantum well structures grown by low pressure metallo-organic vapour phase epitaxy. Distinct peaks from monolayer steps are observed in all samples. For the first time, data on indium-rich In1-xGaxAs/InP structures with complementary gallium contents as low as xGa = 0.07 and xGa = 0.11 are reported. The sample quality appears independent of the number of quantum wells stacked in the structure. With decreasing gallium content, a decrease in luminescence intensity is observed, which is related to an increase in the number of non-radiative recombination centres with respect to lattice-matched samples.}, subject = {Photolumineszenzspektroskopie}, language = {en} } @inproceedings{MahlzahnHeukenGruetzmacheretal.1991, author = {Mahlzahn, Erik and Heuken, Michael and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred and Heime, Klaus}, title = {Advanced InGaAs/InP p-type sydomorphic MODFET}, series = {Proceedings of the SPIE}, volume = {1362}, booktitle = {Proceedings of the SPIE}, pages = {199 -- 204}, year = {1991}, subject = {Indiumarsenid}, language = {en} } @article{StollenwerkGruetzmacher1991, author = {Stollenwerk, Manfred and Gr{\"u}tzmacher, Detlev}, title = {GaInAs/GaInAsP SC-MQW-laser emitting at 1.35 µm grown by LP-MOVPE}, series = {Microelectronic Engineering}, volume = {1991}, journal = {Microelectronic Engineering}, number = {15}, pages = {263 -- 266}, year = {1991}, subject = {Quantenwell-Laser}, language = {en} } @inproceedings{StollenwerkGruetzmacherHeimeetal.1991, author = {Stollenwerk, Manfred and Gr{\"u}tzmacher, Detlev and Heime, Klaus and M{\"o}hrle, Martin and Fidorra, Frank}, title = {GaInAs/GaInAsP SC-MQW Laser mit einer Emissionswellenl{\"a}nge von 1,35 µm deponiert mit Hilfe der LP-MOVPE}, year = {1991}, subject = {Quantenwell-Laser}, language = {de} } @inproceedings{StollenwerkGruetzmacherSchwedleretal.1991, author = {Stollenwerk, Manfred and Gr{\"u}tzmacher, Detlev and Schwedler, Ralf and Meyer, R. and Hardtdegen, Hilde and Kux, A. and Heime, Klaus}, title = {Systematic study of strained GaInAs/InP grown by MOVPE}, year = {1991}, subject = {Galliumarsenid}, language = {en} } @article{DluhoschKrueger1991, author = {Dluhosch, Barbara and Kr{\"u}ger, Malte}, title = {Struktureller Anpassungsbedarf bei hohen Kapitalimporten und festen Wechselkursen - Der Fall Spanien}, series = {Zeitschrift f{\"u}r Wirtschaftspolitik}, volume = {1991}, journal = {Zeitschrift f{\"u}r Wirtschaftspolitik}, number = {2}, pages = {157 -- 180}, year = {1991}, subject = {Spanien}, language = {de} } @incollection{SchmiedeskampDoehringHeidemannetal.1990, author = {Schmiedeskamp, Bernt and D{\"o}hring, Thorsten and Heidemann, Bernhard and Kleineberg, Ulf and Kloidt, Andreas and M{\"u}ller, H. and Nolting, Kerstin and Heinzmann, Ulrich}, title = {„Multischichten f{\"u}r optische Komponenten im weichen R{\"o}ntgengebiet}, series = {D{\"u}nnschichttechnologien `90}, booktitle = {D{\"u}nnschichttechnologien `90}, publisher = {VDI Verlag}, address = {D{\"u}sseldorf}, year = {1990}, language = {de} } @inproceedings{GladeHergethStollenwerketal.1990, author = {Glade, M. and Hergeth, J. and Stollenwerk, Manfred and Gr{\"u}tzmacher, Detlev and Balk, Peter}, title = {Effects of zinc diffusion during MOPVE on performance of InP/InGaAsP double heterostructure lasers}, series = {Proceedings of the 17th International Symposium of GaAs and related Compounds, Jersey, UK}, booktitle = {Proceedings of the 17th International Symposium of GaAs and related Compounds, Jersey, UK}, pages = {579 -- 584}, year = {1990}, subject = {Indiumphosphid}, language = {en} } @inproceedings{MahlzahnHeukenGruetzmacheretal.1990, author = {Mahlzahn, Erik and Heuken, Michael and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred and Heime, Klaus}, title = {High mobility and high sheet density p-type pseudomorphic MODFET}, series = {Proceedings of the 17th International Symposium of GaAs and related Compounds, Jersey, UK}, booktitle = {Proceedings of the 17th International Symposium of GaAs and related Compounds, Jersey, UK}, pages = {579 -- 584}, year = {1990}, subject = {HEMT}, language = {en} } @book{Jost1989, author = {Jost, Thomas}, title = {Zur internationalen Transmission makropolitischer Aktivit{\"a}ten bei flexiblen Wechselkurse}, publisher = {Peter Lang Verlag}, address = {Frankfurt am Main}, pages = {164}, year = {1989}, subject = {Flexibler Wechselkurs}, language = {de} } @book{Lauer, author = {Lauer, Thomas}, title = {Change Management: Grundlagen und Erfolgsfaktoren}, edition = {3., vollst{\"a}ndig {\"u}berarbeitete und erweiterte Auflage}, publisher = {Springer Gabler}, address = {Berlin}, isbn = {978-3-662-59101-7}, doi = {10.1007/978-3-662-59102-4}, subject = {Change Management}, language = {de} }