@article{DoehringSchoenhenseHeinzmann1992, author = {D{\"o}hring, Thorsten and Sch{\"o}nhense, Gerd and Heinzmann, Ulrich}, title = {A circular polariser for the region of windowless VUV radiation}, series = {Measurement Science and Technology}, volume = {3}, journal = {Measurement Science and Technology}, number = {1}, pages = {91 -- 97}, year = {1992}, subject = {Vakuumultraviolett}, language = {en} } @article{OschinowoForchelGruetzmacheretal.1992, author = {Oschinowo, John and Forchel, Alfred and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred and Heuken, Michael and Heime, Klaus}, title = {Photoluminescence study of interdiffusion in In0,53Ga0,47/As/InP surface quantum wells}, series = {Applied Physics Letters}, volume = {60}, journal = {Applied Physics Letters}, number = {21}, pages = {2660 -- 2662}, year = {1992}, abstract = {We have investigated the thermal stability and interdiffusion of In0.53Ga0.47As/InP surface quantum wells. In these structures the optically active InGaAs layer is bounded on one side by vacuum and on the other side by InP. We obtain well-defined photoluminescence emission spectra with high intensity. After rapid thermal annealing at temperatures between 500 and 900 °C (annealing time 1 min) we observe strong emission energy shifts of up to 316 meV. By using a simple model of ion intermixing we estimate large interdiffusion coefficients (e.g., 1.7×10-14 cm2 s-1 for T=900 °C) and an activation energy of 1.3 eV for the surface quantum wells.}, subject = {Photolumineszenz}, language = {en} } @article{ShiGruetzmacherStollenwerketal.1992, author = {Shi, Chang-Xin and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred and Wang, Qing-Kang and Heime, Klaus}, title = {High-performance undoped InP/n-InP/GaAs MSM photodetectors grown by LP-MOVPE}, series = {IEEE Transactions on Electron Devices}, volume = {39}, journal = {IEEE Transactions on Electron Devices}, number = {5}, publisher = {IEEE}, pages = {1028 -- 1031}, year = {1992}, subject = {Indiumarsenid}, language = {en} } @article{MeyerHardtdegenGruetzmacheretal.1992, author = {Meyer, R. and Hardtdegen, Hilde and Gr{\"u}tzmacher, Detlev and Carius, R. and Stollenwerk, Manfred and Balk, Peter}, title = {Optical and structural properties of MOVPE grown GaxIn1-xAs/InP strained multiple quantum well structures}, series = {Journal of Electronic Materials}, volume = {21}, journal = {Journal of Electronic Materials}, number = {3}, pages = {293 -- 298}, year = {1992}, abstract = {This paper presents a study of the structural and optical properties of strained GaInAs/ InP multiple quantum well (MQW) structures fabricated by LP-MOVPE. The composition of the Ga x In1-x As films ranged fromx = 0.17 tox = 1.0 and was determined by sputtered neutral mass spectrometry (SNMS) on thick layers. The structures of the MQW samples with well widths from 1.5 to 5 nm were investigated by high resolution x-ray diffraction (HR-XRD). Simulations of the diffraction patterns showed that transition layers of approximately 2 monolayer (ML) thickness with high lattice mismatch exist at the interfaces. Photoluminescence (PL) measurements indicate well widths of a multiple of a monolayer with local variations of one monolayer. The PL peak energies vary smoothly with the Ga concentration. These results were confirmed by optical absorption measurements.}, subject = {Galliumarsenid}, language = {en} } @article{OschinowoForchelDreybrodtetal.1992, author = {Oschinowo, John and Forchel, Alfred and Dreybrodt, J{\"o}rg and Emmerling, Monika and Gyuro, Imre and Speier, Peter and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred}, title = {Lateral thermal stability modulation for the definition of InGaAs/InP wires}, series = {Microelectronic Engineering}, volume = {17}, journal = {Microelectronic Engineering}, number = {1-4}, pages = {505 -- 508}, year = {1992}, abstract = {We have investigated a novel technique for the definition of semiconductor wires. By the selective local removal of the InP top barrier layer wire patterns in which the top material varies between InP and InGaAs are formed from an InGaAs/InP quantum well. In a subsequent annealing step the top InGaAs layer shows substantially stronger interdiffusion than the InP covered regions (wires). By using luminescence spectroscopy we show that this defectfree enhanced interdiffusion can be used to obtain a lateral energy barrier.}, subject = {Indiumarsenid}, language = {en} } @article{MichaeliTelgenbuescherLeiberetal.1992, author = {Michaeli, Walter and Telgenb{\"u}scher, Klaus and Leiber, J{\"o}rn and Stollenwerk, Manfred}, title = {Plasmapolymerisation zur Veredelung von Kunststoffoberfl{\"a}chen}, series = {D{\"u}nne Schichten}, volume = {1992}, journal = {D{\"u}nne Schichten}, number = {3}, pages = {34 -- 38}, year = {1992}, subject = {Plasmapolymerisation}, language = {de} } @article{MichaeliLeiberTelgenbuescheretal.1992, author = {Michaeli, Walter and Leiber, J{\"o}rn and Telgenb{\"u}scher, Klaus and Stollenwerk, Manfred}, title = {Plasmapolymerisation: Kunststoffe beschichten}, series = {Industrieanzeiger}, volume = {1992}, journal = {Industrieanzeiger}, number = {43}, pages = {58 -- 60}, year = {1992}, subject = {Plasmapolymerisation}, language = {de} } @inproceedings{StollenwerkMichaeliTelgenbuescheretal.1992, author = {Stollenwerk, Manfred and Michaeli, Walter and Telgenb{\"u}scher, Klaus and Leiber, J{\"o}rn and Londschein, Martin}, title = {Verbesserung von Verbundwerkstoffen durch Plasmabehandlung der Verst{\"a}rkungsfasern}, year = {1992}, subject = {Faserverst{\"a}rkter Kunststoff}, language = {de} } @book{DluhoschFreytagKrueger1992, author = {Dluhosch, Barbara and Freytag, Andreas and Kr{\"u}ger, Malte}, title = {Leistungsbilanzsalden und internationale Wettbewerbsf{\"a}higkeit}, publisher = {Institut f{\"u}r Wirtschaftspolitik an der Universit{\"a}t K{\"o}ln}, address = {K{\"o}ln}, pages = {IX, 266 Seiten}, year = {1992}, subject = {Internationale Wettbewerbsf{\"a}higkeit}, language = {de} } @article{Krueger1992, author = {Kr{\"u}ger, Malte}, title = {Was dem EWS geschehen ist}, series = {Wirtschaftsdienst}, volume = {72}, journal = {Wirtschaftsdienst}, number = {10}, pages = {516 -- 519}, year = {1992}, subject = {Europ{\"a}isches W{\"a}hrungssystem}, language = {de} } @article{BoeweringDoehringGaerneretal.1991, author = {B{\"o}wering, Norbert and D{\"o}hring, Thorsten and G{\"a}rner, Ulrich and Heinzmann, Ulrich}, title = {Spectral diagnosis of a laser-produced XUV source using a digital camera system with pinhole transmission grating}, series = {Laser and Particle Beams}, volume = {9}, journal = {Laser and Particle Beams}, number = {2}, pages = {593 -- 601}, year = {1991}, subject = {Extremes Ultraviolett}, language = {en} } @inproceedings{OschinowoForchelGruetzmacheretal.1991, author = {Oschinowo, John and Forchel, Alfred and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred}, title = {RTA study of thermal stability and interdiffusion of InGaAs/InP quantum wells - the influence of InGaAs cap layers}, series = {Third International Conference Indium Phosphide and Related Materials Cardiff/Wales}, booktitle = {Third International Conference Indium Phosphide and Related Materials Cardiff/Wales}, pages = {606 -- 609}, year = {1991}, abstract = {A study of the thermal stability of InGaAs/InP quantum wells with different top barrier compositions that used rapid thermal annealing at temperatures between 600 degrees C and 950 degrees C (annealing time 1 min) is discussed. The thermal interdiffusion effects were evaluated by photoluminescence spectroscopy. From the temperature dependence of the luminescence energy shifts the interdiffusion coefficients and activation energies are determined.}, subject = {Photolumineszenzspektroskopie}, language = {en} } @article{WolterSchwedlerGallmannetal.1991, author = {Wolter, Karl and Schwedler, Ralf and Gallmann, B. and Jaekel, Christian and Stollenwerk, Manfred and Camassel, Jean and Laurenti, Jean Pierre}, title = {Optical characterization of strained InGaAs/InP quantum well structures}, series = {Microelectronic Engineering}, volume = {15}, journal = {Microelectronic Engineering}, number = {1-4}, pages = {593 -- 596}, year = {1991}, abstract = {The effects of strain on the optical properties ofmultiple-quantum well structures grown by low pressure metal organic vapor phase epitaxy have been investigated by photoluminescence spectroscopy. The investigated composition range is varied between 0.17 ≤ xGa ≤ 1.00. Sputtered neutrals mass spectroscopy has been used to calibrate the growth interpolated nominal compositions. Distinct peaks from monolayer variations of well thickness are observed from all samples. The analysis of the PL-spectra leads to the assumption of an intermediate layer of InAs0.65P0.35 at the InP to In1-ϰGaχAs(lower) interface.}, subject = {Indiumarsenid}, language = {en} } @article{SchwedlerWolterGallmannetal.1991, author = {Schwedler, Ralf and Wolter, Karl and Gallmann, B. and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred and Kurz, H.}, title = {Optical characterization of In-rich strained In1-xGaxAs/InP single- and multiple-quantum-wells}, series = {Materials Science and Engineering: B}, volume = {9}, journal = {Materials Science and Engineering: B}, number = {1-3}, pages = {297 -- 300}, year = {1991}, abstract = {We report on the photoluminescence spectroscopy of a large set of strained In1-xGaxAs/InP quantum well structures grown by low pressure metallo-organic vapour phase epitaxy. Distinct peaks from monolayer steps are observed in all samples. For the first time, data on indium-rich In1-xGaxAs/InP structures with complementary gallium contents as low as xGa = 0.07 and xGa = 0.11 are reported. The sample quality appears independent of the number of quantum wells stacked in the structure. With decreasing gallium content, a decrease in luminescence intensity is observed, which is related to an increase in the number of non-radiative recombination centres with respect to lattice-matched samples.}, subject = {Photolumineszenzspektroskopie}, language = {en} } @inproceedings{MahlzahnHeukenGruetzmacheretal.1991, author = {Mahlzahn, Erik and Heuken, Michael and Gr{\"u}tzmacher, Detlev and Stollenwerk, Manfred and Heime, Klaus}, title = {Advanced InGaAs/InP p-type sydomorphic MODFET}, series = {Proceedings of the SPIE}, volume = {1362}, booktitle = {Proceedings of the SPIE}, pages = {199 -- 204}, year = {1991}, subject = {Indiumarsenid}, language = {en} } @article{StollenwerkGruetzmacher1991, author = {Stollenwerk, Manfred and Gr{\"u}tzmacher, Detlev}, title = {GaInAs/GaInAsP SC-MQW-laser emitting at 1.35 µm grown by LP-MOVPE}, series = {Microelectronic Engineering}, volume = {1991}, journal = {Microelectronic Engineering}, number = {15}, pages = {263 -- 266}, year = {1991}, subject = {Quantenwell-Laser}, language = {en} } @inproceedings{StollenwerkGruetzmacherHeimeetal.1991, author = {Stollenwerk, Manfred and Gr{\"u}tzmacher, Detlev and Heime, Klaus and M{\"o}hrle, Martin and Fidorra, Frank}, title = {GaInAs/GaInAsP SC-MQW Laser mit einer Emissionswellenl{\"a}nge von 1,35 µm deponiert mit Hilfe der LP-MOVPE}, year = {1991}, subject = {Quantenwell-Laser}, language = {de} } @inproceedings{StollenwerkGruetzmacherSchwedleretal.1991, author = {Stollenwerk, Manfred and Gr{\"u}tzmacher, Detlev and Schwedler, Ralf and Meyer, R. and Hardtdegen, Hilde and Kux, A. and Heime, Klaus}, title = {Systematic study of strained GaInAs/InP grown by MOVPE}, year = {1991}, subject = {Galliumarsenid}, language = {en} } @article{DluhoschKrueger1991, author = {Dluhosch, Barbara and Kr{\"u}ger, Malte}, title = {Struktureller Anpassungsbedarf bei hohen Kapitalimporten und festen Wechselkursen - Der Fall Spanien}, series = {Zeitschrift f{\"u}r Wirtschaftspolitik}, volume = {1991}, journal = {Zeitschrift f{\"u}r Wirtschaftspolitik}, number = {2}, pages = {157 -- 180}, year = {1991}, subject = {Spanien}, language = {de} } @incollection{SchmiedeskampDoehringHeidemannetal.1990, author = {Schmiedeskamp, Bernt and D{\"o}hring, Thorsten and Heidemann, Bernhard and Kleineberg, Ulf and Kloidt, Andreas and M{\"u}ller, H. and Nolting, Kerstin and Heinzmann, Ulrich}, title = {„Multischichten f{\"u}r optische Komponenten im weichen R{\"o}ntgengebiet}, series = {D{\"u}nnschichttechnologien `90}, booktitle = {D{\"u}nnschichttechnologien `90}, publisher = {VDI Verlag}, address = {D{\"u}sseldorf}, year = {1990}, language = {de} }