TY - CONF A1 - Oschinowo, John A1 - Forchel, Alfred A1 - Grützmacher, Detlev A1 - Stollenwerk, Manfred T1 - RTA study of thermal stability and interdiffusion of InGaAs/InP quantum wells - the influence of InGaAs cap layers T2 - Third International Conference Indium Phosphide and Related Materials Cardiff/Wales N2 - A study of the thermal stability of InGaAs/InP quantum wells with different top barrier compositions that used rapid thermal annealing at temperatures between 600 degrees C and 950 degrees C (annealing time 1 min) is discussed. The thermal interdiffusion effects were evaluated by photoluminescence spectroscopy. From the temperature dependence of the luminescence energy shifts the interdiffusion coefficients and activation energies are determined. KW - Photolumineszenzspektroskopie KW - Indiumarsenid KW - Galliumarsenid KW - Indiumphosphid Y1 - 2019 UR - https://opus4.kobv.de/opus4-h-ab/frontdoor/index/index/docId/1369 SP - 606 EP - 609 ER -