TY - JOUR A1 - Oschinowo, John A1 - Forchel, Alfred A1 - Grützmacher, Detlev A1 - Stollenwerk, Manfred A1 - Heuken, Michael A1 - Heime, Klaus T1 - Photoluminescence study of interdiffusion in In0,53Ga0,47/As/InP surface quantum wells T2 - Applied Physics Letters N2 - We have investigated the thermal stability and interdiffusion of In0.53Ga0.47As/InP surface quantum wells. In these structures the optically active InGaAs layer is bounded on one side by vacuum and on the other side by InP. We obtain well‐defined photoluminescence emission spectra with high intensity. After rapid thermal annealing at temperatures between 500 and 900 °C (annealing time 1 min) we observe strong emission energy shifts of up to 316 meV. By using a simple model of ion intermixing we estimate large interdiffusion coefficients (e.g., 1.7×10−14 cm2 s−1 for T=900 °C) and an activation energy of 1.3 eV for the surface quantum wells. KW - Photolumineszenz Y1 - 2019 UR - https://opus4.kobv.de/opus4-h-ab/frontdoor/index/index/docId/1367 VL - 60 IS - 21 SP - 2660 EP - 2662 ER -