TY - JOUR A1 - Oschinowo, John A1 - Forchel, Alfred A1 - Dreybrodt, Jörg A1 - Emmerling, Monika A1 - Gyuro, Imre A1 - Speier, Peter A1 - Grützmacher, Detlev A1 - Stollenwerk, Manfred T1 - Lateral thermal stability modulation for the definition of InGaAs/InP wires T2 - Microelectronic Engineering N2 - We have investigated a novel technique for the definition of semiconductor wires. By the selective local removal of the InP top barrier layer wire patterns in which the top material varies between InP and InGaAs are formed from an InGaAs/InP quantum well. In a subsequent annealing step the top InGaAs layer shows substantially stronger interdiffusion than the InP covered regions (wires). By using luminescence spectroscopy we show that this defectfree enhanced interdiffusion can be used to obtain a lateral energy barrier. KW - Indiumarsenid KW - Galliumarsenid Y1 - 2019 UR - https://opus4.kobv.de/opus4-h-ab/frontdoor/index/index/docId/1372 VL - 17 IS - 1–4 SP - 505 EP - 508 ER -