TY - CONF A1 - Bischoff, Kay A1 - Mücke, Dominik A1 - Esen, Cemal A1 - Hellmann, Ralf T1 - UV-Femtosecond-Laser Structuring of Silicon Carbide T2 - International Congress on Applications of Lasers & Electro-Optics (ICALEO) 2023 N2 - We report on ultraviolet ultrashort pulsed laser processing of silicon carbide. Laser ablated cavities are evaluated with respect to their ablation rates, surface roughness and overall quality by varying the laser pulse fluence. Using this type of laser, high edge quality and surface roughness down to 107 nm can be achieved with an ablation efficiency of up to 0.228 mm 3 W −1 min −1. Functional surfaces are produced by generating laser induced periodic surface structures. The comparison with infrared wavelength underlines the advantages of the ultraviolet wavelength for laser micro machining this material. Significant differences with respect to the measured ablation depths and roughness as well as generated micro-and nanostructures appear. While infrared ablation is dominated by a chipping mechanism above a critical fluence of 9.93 Jcm −2 , higher ablation rates are observed with strong quality losses at the same time. In comparison to the infrared emission wavelength, in general , a significantly higher processing quality is achieved with the ultraviolet emission wavelength. In addition, the influence of spot size and repetition rate in UV processing is investigated. By increasing these parameters, a process acceleration without quality losses is enabled. The generation of a sophisticated microstructure exemplifies the advantages of processing silicon carbide with the UV laser reported here. KW - Femtosekundenlaser KW - Siliciumcarbid Y1 - 2023 UR - https://opus4.kobv.de/opus4-h-ab/frontdoor/index/index/docId/2251 ER -