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Nanosecond Range Heating and Temperature Measurement on Thin Layers

  • A chemical semiconductor sensor for oxygen gas was activated by thermal treatment. The thin Pt layer of the n-Si/SiO2/Si3N4/LaF3/Pt field effect structure was used as the gate electrode for sensitivity measurements, heating resistance and temperature sensor. Taking advantage of using the gate electrode for heating only the sensitive two layer system LaF3/Pt (thickness only 300 nm) has to be at high temperature. The reactivation was shown to be a very fast process. Within a period of 10µs the structure was heated and the activation process was completed. The temperature measurement was done using the voltage drop at the gate and the current of the heating impulse. For the temperature measurement a resolution on the time scale of nanoseconds was achieved. The time dependent temperature distribution in the sensor multi layer structure was simulated using the CFD-ACE+ software of CFDRC. For the µs-impulses the temperature increase of only the thin layers and not the silicon bulk was shown.

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Metadaten
Author:Jürgen Hartmann, W. Moritz, U. Roth, M. Heyde, K. Rademann, M. Reichling
Persistent identifier:https://www.researchgate.net/profile/Juergen_Hartmann3/publication/238109507_Nanosecond_Range_Heating_and_Temperature_Measurement_on_Thin_Layers_Experiment_and_Simulation/links/0a85e52e8b51b9126e000000/Nanosecond-Range-Heating-and-Temperature-Measurement-on-Thin-Layers-Experiment-and-Simulation.pdf
Parent Title (English):Proceedings of the International Conference on Modeling and Simulation of Microsystems, Semiconductors, Sensors and Actuators
Subtitle (English):Experiment and Simulation
Publisher:MSM 99
Document Type:Conference Proceeding
Language:English
Year of publication:1999
Publishing Institution:Hochschule für Angewandte Wissenschaften Würzburg-Schweinfurt
Release Date:2020/12/04
First Page:655
Last Page:658
Dewey Decimal Classification:5 Naturwissenschaften und Mathematik / 53 Physik / 536 Wärme
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