<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>1856</id>
    <completedYear/>
    <publishedYear>1996</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>313</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>report</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation>6. international meeting on chemical sensors, Gaithersburg, MD (United States)</creatingCorporation>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Improvement of the active layers of a field effect sensor for fluorine</title>
    <abstract language="eng">The quantitative determination of fluorine in gases is of great importance as this gas is often used in various industrial processes, but is toxic even at low concentrations. Therefore, there is a great demand for sensors for this gases and alarm systems controlling the environment. Recently, the auhtors reported on first results with a new field effect sensor for the determination of F {sub 2}. A silicon substrate was used with a thin layer of LaF {sub 3} in direct contact to the semiconductor and platinum electrode on the top. In early results, a good sensitivity was achieved but an insufficient stability and limit of detection required further improvements. The corresponding findings and fundamental investigations on the sensor mechanism will be given in this paper.</abstract>
    <enrichment key="review.accepted_by">2</enrichment>
    <author>Jürgen Hartmann</author>
    <collection role="ddc" number="546">Anorganische Chemie</collection>
    <thesisPublisher>Hochschule für Angewandte Wissenschaften Würzburg-Schweinfurt</thesisPublisher>
  </doc>
</export-example>
