Atomic layer deposition on 2D transition metal chalcogenides: layer dependent reactivity and seeding with organic ad-layers

Language
en
Document Type
Article
Issue Date
2017-07-03
Issue Year
2015
Authors
Wirtz, Christian
Hallam, Toby
Cullen, Conor Patrick
Berner, Nina C.
O'Brien, Maria
Marcia, Mario
Hirsch, Andreas
Duesberg, Georg S.
Editor
Abstract

This commmunication presents a study of atomic layer deposition of Al2O3 on transition metal dichalcogenide (TMD) two-dimensional films which is crucial for use of these promising materials for electronic applications. Deposition of Al2O3 on pristine chemical vapour deposited MoS2 and WS2 crystals is demonstrated. This deposition is dependent on the number of TMD layers as there is no deposition on pristine monolayers. In addition, we show that it is possible to reliably seed the deposition, even on the monolayer, using non-covalent functionalisation with perylene derivatives as anchor unit.

Journal Title
Chemical Communications
Volume
51
Issue
92
Citation
Chemical Communications 51.92 (2015): S. 16553-16556. <http://pubs.rsc.org/en/content/articlelanding/2015/cc/c5cc05726d#!divAbstract>
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