Tuning the emission colour by manipulating terbium-terbium interactions: Terbium doped aluminum nitride as an example system

  • Terbium-terbium interactions in terbium doped semiconductors and insulators may lead to the so-called cross-relaxation process, which increases the 5D4 (green) emission of the terbium ions at the cost of the 5D3 (blue) luminescence intensity. This effect can generally be reduced by increasing the distance between an excited ion and the nearest ion in the ground state. A straightforward measure is to use a specimen with a decreased terbium concentration. The alternative is to increase the intensity of the excitation (either by photons or electrons) and thereby to reduce the population of terbium ions in the ground state. This paper works this process out with the example of AlN:Tb on the basiTerbium-terbium interactions in terbium doped semiconductors and insulators may lead to the so-called cross-relaxation process, which increases the 5D4 (green) emission of the terbium ions at the cost of the 5D3 (blue) luminescence intensity. This effect can generally be reduced by increasing the distance between an excited ion and the nearest ion in the ground state. A straightforward measure is to use a specimen with a decreased terbium concentration. The alternative is to increase the intensity of the excitation (either by photons or electrons) and thereby to reduce the population of terbium ions in the ground state. This paper works this process out with the example of AlN:Tb on the basis of a model and respective experimental results. As will be seen, stronger excitation causes in essence more Tb ions to be excited, thus less ions in the ground state which increases the distance between an excited and the nearest ground state ions. This hinders energy transfer between the terbium ions and thus counteracts the cross-relaxation process. The advantage of changing the excitation intensity lies in the possibility to deliberately shift the apparent colour of the Tb luminescence from a single specimen between green and blue.show moreshow less

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Metadaten
Author:Felix Benz, Horst P. Strunk, Jakob Schaab, Ulrike Künecke, Peter Wellmann
URN:urn:nbn:de:bvb:29-opus-49446
Document Type:Article
Language:English
Year of Completion:2013
Publishing Institution:Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
Release Date:2013/09/02
Tag:III-V semiconductors; aluminium compounds; excited states; ground states; ionoluminescence
SWD-Keyword:-
Original publication:Journal of Applied Physics 114.7 (2013): 02.09.2013 <http://jap.aip.org/resource/1/japiau/v114/i7/p073518_s1>
Institutes:Technische Fakultät / Technische Fakultät -ohne weitere Spezifikation-
Dewey Decimal Classification:Technik, Medizin, angewandte Wissenschaften / Technik / Technik, Technologie
open_access (DINI-Set):open_access
Collections:Universität Erlangen-Nürnberg / Allianzlizenzen / Allianzlizenzen 2013

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