Precise control of epitaxy of graphene by microfabricating SiC substrate

  • Epitaxial graphene (EG) on SiC is promising owing to a capability to produce high-quality film on a wafer scale. One of the remaining issues is microscopic thickness variation of EG near surface steps, which induces variations in its electronic properties and device characteristics. We demonstrate here that the variations of layer thickness and electronic properties are minimized by using microfabricated SiC substrates which spatially confines the epitaxy. This technique will contribute to the realization of highly reliable graphene devices.

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Author:H. Fukidome, Y. Kawai, Felix Fromm, M. Kotsugi, H. Handa, T. Ide, T. Ohkouchi, H. Miyashita, Y. Enta, T. Kinoshita, Thomas Seyller, M. Suemitsu
Document Type:Article
Year of Completion:2012
Publishing Institution:Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
Release Date:2012/11/08
Tag:epitaxial growth; epitaxial layers; graphene; microfabrication; semiconductor growth
Original publication:Applied Physics Letters 101.4 (2012): 07.11.2012 <>
Institutes:Naturwissenschaftliche Fakultät / Naturwissenschaftliche Fakultät -ohne weitere Spezifikation-
Dewey Decimal Classification:Naturwissenschaften und Mathematik / Naturwissenschaften / Naturwissenschaften und Mathematik
open_access (DINI-Set):open_access
Collections:Universität Erlangen-Nürnberg / Allianzlizenzen / Allianzlizenzen 2012

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