Highly p-doped epitaxial graphene obtained by fluorine intercalation

Language
en
Document Type
Article
Issue Date
2012-11-06
Issue Year
2011
Authors
Walter, Andrew L.
Jeon, Ki-Joon
Bostwick, Aaron
Speck, Florian
Ostler, Markus
Seyller, Thomas
Moreschini, Luca
Kim, Yong Su
Chang, Young Jun
Horn, Karsten
Editor
Abstract

We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p ≈ 4.5×1013 cm−2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point ED.

Journal Title
Applied Physics Letters 98.18 (2011): 05.11.2012 <http://apl.aip.org/resource/1/applab/v98/i18/p184102_s1>
Citation

Applied Physics Letters 98.18 (2011): 05.11.2012 http://apl.aip.org/resource/1/applab/v98/i18/p184102_s1

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