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TiAl alloys with a high addition of Nb have recently been applied in the aerospace and automotive fields due to their excellent high-temperature properties. The C additions to TiAl alloys have been reported to improve their strength and creep resistance through solid-solution hardening and / or precipitation hardening. In this work powder metallurgy (PM) based Ti-45Al-5Nb-xC (x=0, 0.5 0.75 and 1.0 at. %) alloys were systematically investigated after different heat treatments. The research is mainly concerned with the temperature range from 800 to 1000ºC which is interesting for processing as well as applications. The results show that the addition of C influences the phase transformations in Ti-45Al-5Nb and that the addition of Nb may influence the carbon solubility in TiAl alloys at high temperatures. The carbon solubility in Ti-45Al-5Nb is > 1.0 at. % at 1400°C, but between 0.5 and 0.75 at. % at 1000°C, and less than 0.5 at. % at 800°C. The carbide precipitation and development of carbide morphology are discussed in great detail. The thermal stability of P-Ti3AlC carbides in Ti-45Al-5Nb-xC alloys is increased, which might be attributed to the addition of high amounts of Nb, or the high amount of carbon, or a combination of both. In heat-treated Ti-45Al-5Nb-0.5C and Ti-45Al-5Nb-0.75C, H-type carbides are not detected to form during annealing. The addition of Nb may increase the formation temperature of the H-Ti2AlC precipitate phase.
During the last decades the research and implementation of integrated circuits in W-band (Frequencies from 75 GHz to 111 GHz) or frequencies beyond were mainly dominated by GaAs technologies due to their high-performance devices. However, the low-cost requirement of commercial consumer products limits the application of GaAs technologies. Recently, the advents of 200 GHz fT SiGe:C technologies pave the way for realizing the millimeter-wave circuits with their lower cost and excellent performance. This work is focused on the design and implementation of circuits in IHP's low-cost SiGe:C technology at W-band and frequencies beyond. Different types of high-speed frequency dividers as benchmarking circuits are designed and measured to show the speed and power performance of the SiGe technology in this work. Furthermore, this work includes the design and implementation of 77 GHz/79 GHz automotive radar front-end circuits. The results are compared with the state-of-the-art to demonstrate the performance of the circuit and technology. The aim is to show the design techniques and the possibility of adopting IHP's low-cost SiGe:C technology to realize high performance circuits for high-speed applications such as future automotive radar system.