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The objective of this thesis was to accurately check and improve the models existing for eutectic solder alloys used in simulation tools. Creep deformation,which is the most important deformation mode of solders, of two solder alloys, the widely used eutectic SnPb and the environmentally friendly alternative solder alloy SnAgCu was tested. It was shown that it is necessary to model two different stages of this high temperature induced mechanism: To improve the current material definition, primary creep must be implemented in the FE-software in addition to the existing secondary creep models. This thesis shows how it is possible to test creep behaviour under cyclic loading conditions with a test specimen of novel design. So, primary creep was observed and reoccurs cyclically under such test conditions. Furthermore, steady state creep is also always observed. A Constitutive equation combining both primary and secondary creep was given and verified. This model was implemented in FE-code Ansys, and after performing different kinds of simulation, the necessity of simulating primary creep was demonstrated. In order to achieve reliability information by FE-simulation of solder die attach, the creep-fatigue behaviour with the mean of crack propagation must be modeled. Various kinds of chips on copper substrate (power-transistors) were thermally tested, and different methods were used to investigate crack propagation. These methods were scanning acoustic microscopy and microstructure analysis by optical microscopy. The influence of damage on thermal behaviour (i.e. the thermal resistance of the device) was also assessed. These results were compared with the simulation results in order to build a lifetime prediction model based on crack propagation analysis.
The goal of this work is to investigate pattern formation processes on the solid-liquid interface during the crystal growth of GeSi. GeSi crystals with cellular structure have great potential for applications in gamma-ray and neutron optics. The interface patterns induce small quasi-periodic distortions of the microstructure called mosaicity. Existence and properties of this mosaicity are important for the application of the crystals. The properties depend on many factors; this dependence, is currently not known even not qualitatively. A better understanding of the physics near the crystal surface is therefore required, in order to optimise the growth process. There are three main physical processes in this system: phasetransition, diffusion and melt flow. Every process is described by its own set of equations. Finite difference methods and lattice kinetic methods are taken for solving these governing equations. We have developed a modification of the kinetic methods for the advectiondiffusion and extended this method for simulations of non-linear reaction diffusion equations. The phase-field method was chosen as a tool for describing the phase-transition. There are numerous works applied for different metallic alloys. An attempt to apply the method directly to simulation GeSi crystal growth showed that this method is unstable. This instability has not been observed in previous works due to the much smaller scale of simulations. We introduced a modified phase-field scheme, which enables to simulate pattern formation with the scale observed in experiment. A flow in the melt was taken in to account in the numerical model. The developed numerical model allows us to investigate pattern formation in GeSi crystals. Modelling shows that the flow near the crystal surface has impact on the patterns. The obtained patterns reproduce qualitatively and in some cases quantitatively the experimental results.