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  <doc>
    <id>6348</id>
    <completedYear>2023</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2023-04-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">1. Memristor-Symposium 2023</title>
    <title language="deu">1. Memristor-Symposium 2023</title>
    <abstract language="eng">The 1.Memristor-Symposium was held from 27-28.02.2023 in Bamberg. Young scientists and PhD students presented their research and covered several topics regarding ongoing memristive research in Germany. Several talks on the topic of memristive devices, their testing, modeling and usage were presented and discussed, covering the whole vertical integration from material and divice up to application level.</abstract>
    <abstract language="deu">Das 1.Memristor-Symposium fand am 27. und 28.02.2023 in Bamberg statt. Junge Wissenschaftler*innen und Doktorant*innen präsentierten dort ihre aktuelle Arbeit und deckten dabei mehrere Themengebiete aus der memristiven Forschung in Deutschland ab. Die Vorträge kommen aus dem Bereich der memristiven Bauteile, deren Test, Modellierung und Anwendung und decken dabei die volle vertikale Integration von Materialforschung über Bauteile bis hin zur Anwendungsebene ab.</abstract>
    <identifier type="doi">10.26127/BTUOpen-6348</identifier>
    <identifier type="urn">urn:nbn:de:kobv:co1-opus4-63489</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Creative Commons - CC BY-SA - Namensnennung - Weitergabe unter gleichen Bedingungen 4.0 International</licence>
    <author>Stefan Pechmann</author>
    <author>Amelie Hagelauer</author>
    <author>Christian Wenger</author>
    <author>Marc Reichenbach</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Memristor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Memristive switching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RRAM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Modeling</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Memristisches Schalten</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Modellierung</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>swd</type>
      <value>Memristor</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>swd</type>
      <value>Modellierung</value>
    </subject>
    <collection role="ddc" number="600">Technik, Technologie</collection>
    <collection role="collections" number="">Wiss. Publikationen</collection>
    <collection role="institutes" number="1204">FG Technische Informatik</collection>
    <thesisPublisher>BTU  Cottbus - Senftenberg</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-btu/files/6348/Memristor_Symposium_1.pdf</file>
  </doc>
</export-example>
