@phdthesis{Glišić2010, author = {Glišić, Srđan}, title = {Design of fully integrated 60 GHz OFDM transmitter in SiGe BiCMOS technology}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:co1-opus-22062}, school = {BTU Cottbus - Senftenberg}, year = {2010}, abstract = {The goal of this thesis is the analysis of the challenges and finding solutions for the design of mm-wave transceivers. The work presented here is focused on design of transmitter (TX) components, which are critical for the performance of the whole analog front-end. Phase-locked loop (PLL) phase noise is optimized, an image-rejection filter and a high 1 dB compression point (P1dB) power amplifier (PA) are designed. The PLL phase noise optimization is presented and different PLL topologies are compared. A new optimized recipe for calculating PLL parameters of a forth order PLL is presented. Using this approach the spurious sidebands can be reduced by up to 10 dB. The image-rejection filter chapter analyzes the challenges related to the design of the integrated image-rejection filter. The analysis presented here is the first on integrated filters for the 60 GHz band, because the previously published work dealt with on-board filters. The main problems related to the design of integrated filters arise from the low quality factor of the integrated resonators. The effects are high insertion loss and low selectivity. Two measures to reduce the insertion loss of the image-rejection filters were suggested. One is to design the filter as broadband. This measure deteriorates selectivity, so the minimum required image-rejection will limit the width of the passband. The second measure is to design the filter as broadband with non-equidistant transmission zeros (i.e. asynchronously tuned filter). This measure will improve both the insertion loss and the image-rejection. The challenges related to the design of mm-wave PAs with high P1dB are analyzed and the procedure of the PA design is presented. The difficulties related to the PA design and layout are discussed and optimum solutions presented. Limits of different power combining techniques for integrated PAs are discussed. Effects of poor on-chip ground connection are analyzed. Different causes for P1dB degradation are analyzed. The produced PA features a differential cascode topology. The layout is symmetrical and presents a virtual ground on the symmetry line for the differential signal. The optimized schematic and a symmetrically drawn layout resulted in a 17 dBm measured P1dB. It was the highest reported P1dB in 60 GHz SiGe PAs when it was published. The fully integrated TX was used for data transmission with data rate of 3.6 Gbit/s (with coding 4.8 Gbit/s) over 15 meters. This is the best result in the class of 60 GHz AFEs without beamforming.}, subject = {OFDM; Hochfrequenztechnik; Sender; 60 GHz; Leistungsverst{\"a}rker; SiGe; OFDM; Transmitter; 60 GHz; Power Amplifier; SiGe; OFDM}, language = {en} } @phdthesis{Wang2008, author = {Wang, Li}, title = {Millimeter-wave Integrated Circuits in SiGe:C Technology}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:co1-opus-5993}, school = {BTU Cottbus - Senftenberg}, year = {2008}, abstract = {During the last decades the research and implementation of integrated circuits in W-band (Frequencies from 75 GHz to 111 GHz) or frequencies beyond were mainly dominated by GaAs technologies due to their high-performance devices. However, the low-cost requirement of commercial consumer products limits the application of GaAs technologies. Recently, the advents of 200 GHz fT SiGe:C technologies pave the way for realizing the millimeter-wave circuits with their lower cost and excellent performance. This work is focused on the design and implementation of circuits in IHP's low-cost SiGe:C technology at W-band and frequencies beyond. Different types of high-speed frequency dividers as benchmarking circuits are designed and measured to show the speed and power performance of the SiGe technology in this work. Furthermore, this work includes the design and implementation of 77 GHz/79 GHz automotive radar front-end circuits. The results are compared with the state-of-the-art to demonstrate the performance of the circuit and technology. The aim is to show the design techniques and the possibility of adopting IHP's low-cost SiGe:C technology to realize high performance circuits for high-speed applications such as future automotive radar system.}, subject = {Integrierte Mikrowellenschaltung; Silicium; Germanium; MMiC; Integrierte Millimeterwellenschaltung; Millimeter-wave; IC; SiGe; HBT; W-band}, language = {en} }