@phdthesis{Kared2025, author = {Kared, Trusha}, title = {Mathematical analysis, design, and validation of a high dynamic range, low noise differential mixer using SiGe microwave transistors}, doi = {10.26127/BTUOpen-7121}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:co1-opus4-71216}, school = {BTU Cottbus - Senftenberg}, year = {2025}, abstract = {The limits imposed by the wireless environment require the designer to consider noise, linearity, and power consumption. Bipolar technology has been the most appealing silicon technology due to its high-speed performance and well-engineered base parasitics. Its high transition frequency and low base resistance have resulted in remarkable noise performance. These advantages, combined with scaling flexibility, have made bipolar devices the fundamental component of silicon RF front-ends. With the growing demand for high-performance wireless applications from satellite and radar systems to 5G infrastructure, there is a strong need for advanced mixer architectures that can deliver high isolation, gain, and low noise across wide frequency ranges. The purpose of this dissertation was to describe the differential mixer and its mathematical properties in terms of gain and noise figure, and to explore further optimizations. In fact, it turned out that the mixer design was greatly improved in terms of both the noise figure and the intercept point. The active double-balanced down-conversion mixer is built on SiGe technology. The circuit exhibits significant improvement in terms of the mixer's other performance parameter metrics. This dissertation presents a novel SiGe HBT-based differential double-balanced down-conversion mixer featuring significantly enhanced conversion gain, noise performance, linearity, dynamic range, and port-to-port isolation. Compared to existing designs, this mixer delivers outstanding performance, achieving a single-sideband (SSB) noise figure of 7 dB ± 0.4 dB, a conversion gain of 12 dB ± 1 dB, and exceptional isolation metrics RF-to-IF isolation greater than 35 dB, with LO-to-RF and LO-to-IF isolation exceeding 50 dB across the 0.5 GHz to 1.8 GHz frequency range. Furthermore, it has an Input third-order intercept point (IP3) of +4.7 dBm, an output third-order intercept point (OIP3) of +15 dBm, and a 1 dB compression point of -8 dBm. This high-performance down-conversion double-balanced mixer integrates several state-of-the-art innovations. A transformer-free single-ended-to-differential conversion enhances efficiency and eliminates unnecessary components at the RF stage. The dual-feedback linearization technique optimizes impedance matching while suppressing nonlinear distortion, ensuring superior linearity. Additionally, symmetrical active device layout and advanced multilayer PCB technology significantly mitigate LO-to-RF feedthrough, reducing crosstalk and maximizing port-to-port isolation. These advancements collectively result in a highly efficient, low-noise, and exceptionally linear mixer architecture, setting a new benchmark in SiGe HBT-based mixer technology rather than relying on noisy CMOS technology. Due to its higher fabrication complexity, lower yield at advanced nodes, and the necessity for more complicated design tactics in high-frequency applications, CMOS technology in small quantities is ultimately more costly than SiGe HBT-based designs. Although CMOS excels in low-power applications and large-scale digital integration, SiGe HBT remains a reasonably affordable option for high-performance RF}, subject = {Down-conversion double balanced mixer; Noise figure; Dynamic range; Marchand balun; LO mixing core; Doppelt balancierter Abw{\"a}rtsmischer; Rauschmaß; Dynamikbereich; Marchand-Balun; LO-Mischkern; Heterobipolartransistor; Siliciumhalbleiter; Germaniumlegierung; Mischer ; Rauschmessung}, language = {en} }