@phdthesis{Sohal2006, author = {Sohal, Rakesh}, title = {CVD growth of (001) and (111) 3C-SiC epilayers and their interface reactivity with praseodymium oxide dielectric layers}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:co1-opus-121}, school = {BTU Cottbus - Senftenberg}, year = {2006}, abstract = {In this work, growth and characterisation of 3C-SiC thin films, investigation of oxidation of thus prepared layers and Pr-silicate and AlON based interface with SiC have been studied. Chemical vapor deposition of 3C-SiC thin films on Si(001) and Si(111) substrates has been investigated. Prior to the actual SiC growth, preparation of initial buffer layers of SiC was done. Using such a buffer layer, epitaxial growth of 3C-SiC has been achieved on Si(111) and Si(001) substrates. The temperature of 1100°C and 1150°C has been determined to be the optimal temperature for 3C-SiC growth on Si (111) and Si(001) substrates respectively. The oxidation studies on SiC revealed that a slow oxidation process at moderate temperatures in steps was useful in reducing and suppressing the g-C at the SiO2/SiC interface. Clean, graphitefree SiO2 has been successfully grown on 3C-SiC by silicon evaporation and UHV anneal. For the application of high-k Pr2O3 on silicon carbide, plausible interlayer, Pr-Silicate and AlON, have been investigated. Praseodymium silicate has been prepared successfully completely consuming the SiO2 and simultaneously suppressing the graphitic carbon formation. A comparatively more stable interlayer using AlON has been achieved. This interlayer mainly consists of stable phases of AlN along with some amount of Pr-aluminates and CN. Such layers act as a reaction barrier between Pr2O3 and SiC, and simultaneously provide higher band offsets.}, subject = {Siliciumcarbid; Kristallfl{\"a}che; Dielektrische Schicht; CVD-Verfahren; Oxidation; Oxidation}, language = {en} }