@phdthesis{Rumiantsev2014, author = {Rumiantsev, Andrej}, title = {On-Wafer calibration techniques enabling accurate characterization of high-performance silicon devices at the mm-wave range and beyond}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:co1-opus-30659}, school = {BTU Cottbus - Senftenberg}, year = {2014}, abstract = {This work addressed the challenges of accurate mm-wave characterization of devices fabricated in advanced semiconductor technologies. It developed the in-situ calibration solution that is easy to be implemented for silicon technologies. The new technique was verified up to 110 GHz on three difference processes: high performance SiGe:C BiCMOS from IHP Microelectronics (Germany), BiCMOS9MMW from STMicroelectronics (France), and RF CMOS 8SF from IBM Microelectronics (USA). The measurement frequency was solely limited by the capability of the test equipment. Practical results demonstrated that proposed in-situ calibration significantly outperforms the convention method independently on the process specifics and complexity. Some important aspects of the on-wafer S-parameter measurement assurance were presented as well. The discussion included the analysis of the calibration residual errors caused by the improper boundary conditions of coplanar calibration standards and the impact of the RF probe tip design. In conclusion, some suggestions for further accuracy improvement of the proposed method are given.}, subject = {BICMOS; Wafer; Schaltungsentwurf; S-Parameter; On-Wafer Charakterisierung; On-Wafer Kalibriermethoden; BiCMOS; CMOS; S-parameters; On-wafer characterization; On-wafer calibration; BiCMOS; CMOS}, language = {en} }