@phdthesis{Petryk2024, author = {Petryk, Dmytro}, title = {Investigation of sensitivity of different logic and memory cells to Laser Fault Injections}, doi = {10.26127/BTUOpen-6664}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:co1-opus4-66647}, school = {BTU Cottbus - Senftenberg}, year = {2024}, abstract = {Plenty of semiconductor devices are developed to operate with private data. To guarantee data privacy cryptographic algorithms are used, where the secrecy is based on the used keys. Theoretically, the cryptographic algorithms using keys with recommended lengths are secure. The issue is that a potential attacker can steal the devices and attack in a lab. Physical attacks are usually aimed to perturb normal operation of a device and to extract cryptographic keys, e.g. by means of fault injection (FI). One class of FI attacks exploits the sensitivity of semiconductor devices to light and are performed using a laser as the light source. This work investigates the sensitivity of different logic and memory cells to optical Fault Injection attacks. Front-side attacks against cells manufactured in different IHP technologies were performed using two different red lasers controlled by Riscure software. To reach the repeatability of the experimental results and to increase the comparability of the results with attack results published in literature the setup parameters as well as setting parameters of the Riscure software were experimentally evaluated. Attacks were performed against inverter, NAND, NOR, flip-flop cells from standard libraries, radiation-hard flip-flops based on Junction Isolated Common Gate technique, radiation-tolerant Triple Modular Redundancy registers as well as non-volatile Resistive Random Access Memory (RRAM) cells. The results of attacks against volatile circuits were successful transient bit-set and bit-reset as well permanent stuck-at faults. The results of attacks against RRAM cells were successful in the sense that manipulation of all RRAM logic states was feasible. The faults injected during the performed experiments were repeatable and reproducible. The goal of this work was not only to achieve successful FI but also to determine cell area(s) sensitive to laser illumination. Knowledge about areas sensitive to laser illumination can be used by designers to implement corresponding countermeasure(s) at the initial stage of chip development and is the necessary step to design appropriate countermeasures. For example, metal fillers can be applied as optical obstacles reducing the success of front-side FI attacks, i.e. as a possible low-cost countermeasure. Based on the knowledge of the sensitive cell areas, the placement of the metal fillers can be automated in the future, i.e. the findings given in the work can serve as a basis for a methodology development for improving resistance against optical FI attacks at the initial stage of chip development. Such methodology can be adapted for each chip manufacturing technology.}, subject = {Laser fault injection attacks; Resistive random access memory; Cell sensitive areas; Radiation-hard cells; Countermeasure; Laserfehlerinjektion-Angriffe; Resistiver Direktzugriffsspeicher; Empfindliche Zellbereiche; Strahlungsharte Zellen; Gegenmaßnahme; Halbleiter; Speicherzelle; Datenschutz; Kryptologie; Algorithmus}, language = {en} } @phdthesis{Uhlig2022, author = {Uhlig, Sebastian}, title = {Silizium-basierte Mikropumpen mit dem lateralen nanoskopischen elektrostatischen Antrieb}, doi = {10.26127/BTUOpen-5952}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:co1-opus4-59523}, school = {BTU Cottbus - Senftenberg}, year = {2022}, abstract = {In dieser Arbeit werden neuartige Mikropumpen auf Siliziumbasis vom Typ oszillierende-Verdr{\"a}ngerpumpe mit einem in der Chipebene operierenden elektrostatischen Antrieb entwickelt, gefertigt und messtechnisch charakterisiert. Der Antriebsmechanismus ist aus einer am Fraunhofer IPMS entwickelten Klasse von Mikroaktoren, bekannt als nanoskopisch elektrostatischer Antrieb (NED) aufgebaut. Zum Einsatz kommen erstmals beidseitig eingespannte laterale NED-Balkenaktoren, prim{\"a}r entwickelt und optimiert f{\"u}r den quasi-statischen Betrieb. Eingebettet in einem Verbund aus drei Siliziumwafern und in Verbindung mit in der Ebene operierenden passiven Klappenventilen, konnte ein regelbarer Fluss in Luft als gasf{\"o}rmiges sowie in Novec7100 als fl{\"u}ssiges F{\"o}rdermedium nachgewiesen werden. Die Entwicklung der Mikropumpen bildet einen Schwerpunkt dieser Arbeit und ist in zwei Abschnitte unterteilt. Eingangs werden Effekte, welche den Betrieb der NED-Balkenaktoren limitieren untersucht sowie Schl{\"u}sselparameter und deren Auswirkung identifziert. Basierend auf der Wahl der F{\"o}rdermedien und den sich daraus ableitenden elektrotechnischen Randbedingungen wurde die Steuerspannung in Luft auf 400 V festgelegt und per Optimierungsverfahren ein Aktordesignpunkt bestimmt. Der zweite Entwicklungsschwerpunkt beinhaltet den Entwurf und die Modellbildung der Mikropumpen mit dem bestimmten Aktordesignpunkt. Hier wurde ein modularer Ansatz zum Aufbau der Pumpe eruiert. Mit sogenannten "Basis-Pumpeinheiten" werden verschiedene Konfigurationen realisiert, was zu unterschiedlichen Pumpeigenschaften f{\"u}hrt. Diese beinhalten unter anderem serielle Anordnungen von NED-Aktoren und Basiseinheiten sowie die parallele Stapelung der Balkenaktoren. Damit unterscheidet sich der laterale Pumpenansatz in seiner Konfigurierbarkeit grundlegend zu klassischen Mikromembranpumpen. Die Etablierung einer Herstellungstechnologie mit stabilem Fertigungsprozess f{\"u}hrte zur erfolgreichen monolithischen Herstellung von Pumpenchips im Scheibenverbund. Der Prozess ist CMOS-kompatibel und beinhaltet verschiedene Technologiemodule. In der fluidischen Bauteilcharakterisierung wurden je nach Anzahl der gestapelten NEDAktoren maximale Flussraten von 6.63 µL/min, 22.85 µL/min, 63.75 µL/min, 72.92 µL/min in Novec7100 gemessen, f{\"u}r jeweils 2, 4, 8, 16 parallele NED-Aktoren entsprechend. Die erreichten Gegendr{\"u}cke sind dabei 2.79 kPa, 6.88 kPa, 20.55 kPa, 29.61 kPa. Typische Antriebsfrequenzen der Mikropumpen liegen im Kilohertz-Bereich, was sich auf den hohen Miniaturisierungsgrad und die damit verbundenen mechanischen Steiffigkeit der NED-Aktoren zur{\"u}ckf{\"u}hren l{\"a}sst. Die Gegen{\"u}berstellung der experimentell bestimmten Kennlinien mit Simulationsdaten aus dem entwickelten Modell der Pumpe, best{\"a}tigen das auf dem NED-Effekt beruhende Pumpprinzip.}, subject = {Micropump; Silicone; Silicium; Mikrosystemtechnik; Halbleiter; Physik; Mikrofluidik; Siliciumhalbleiter; Mikropumpe; Mikrofluidik; Mikrosystemtechnik; Semiconductor}, language = {de} } @phdthesis{Hartmann2018, author = {Hartmann, Claudia}, title = {Surface and interface characterization of CH₃NH₃PbI₍₃₋ₓ₎Clₓ and CsSnBr₃ perovskite based thin-film solar cell structures}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:co1-opus4-46358}, school = {BTU Cottbus - Senftenberg}, year = {2018}, abstract = {The chemical and electronic structure of hybrid organometallic (CH₃NH₃PbI₍₃₋ₓ₎Clₓ) and inorganic (CsSnBr₃) perovskite materials on compact TiO₂ (c-TiO₂) is studied using x-ray and electron based spectroscopic techniques. The morphology and local elemental composition of CH₃NH₃PbI₍₃₋ₓ₎Clₓ, used as absorbers in PV devices, defining the film quality and influencing the performance of respective solar cells is studied in detail by using photoemission electron microscopy (PEEM). An incomplete coverage, with holes reaching down to the c-TiO₂ was revealed; three different topological regions with different degrees of coverage and chemical composition were identified. Depending on the degree of coverage a variation in I oxidation and the formation of Pb⁰ in the vicinity of the c-TiO₂ is found. The valence band maxima (VBM) derived from experimental data for the perovskite and c-TiO₂, combined with information from literature on spiro-MeOTAD suggests an energy level alignment resulting in an excellent charge selectivity at the absorber/spiro-MeOTAD and absorber/c-TiO₂ interfaces respectively. Further, the derived energy level alignment indicates a large recombination barrier (~2 eV), preventing shunts due to direct contact between c-TiO₂ and spiro-MeOTAD in the pin-holes. In-situ ambient pressure hard x-ray photoelectron spectroscopy (AP-HAXPES) studies of 60 and 300 nm CH₃NH₃PbI₍₃₋ₓ₎Clₓ have been performed under varies conditions (i.e. vacuum/water and dark/UV light) to gain insight into the degradation mechanism responsible for the short lifetime of the absorber. The 60 nm perovskite forms Pb⁰ in water vapor (non-defined illumination) in presence of x-rays. The 300 nm perovskite sample shows a complex behavior under illumination/dark. In water vapor/dark the perovskite dissolves into its organic (MAI) and inorganic (PbI₂) components. Under illumination PbI₂ further decomposes to Pb⁰ induced by UV light and x-rays. For alternative inorganic CsSnBr₃ perovskites, the impact of SnF₂ on the chemical and electronic structure is studied to identify its role for the improved performance of the solar cell. HAXPES and lab-XPS measurements performed on CsSnBr₃ with and without SnF₂ indicate two Sn, Cs, and Br species in all samples, where the second Sn species is attributed to oxidized Sn (Sn⁴⁺). When adding SnF₂ to the precursor solution, the coverage is improved and less Sn⁴⁺ and Cs and Br secondary species can be observed, revealing an oxidation inhibiting effect of SnF₂. Additionally, SnF₂ impacts the electronic structure, enhancing the density of states close to the VBM.}, subject = {Perovskite; Photoelectron spectroscopy; Thin-film solar cell; Solid-state physics; Photovoltaics; Photovoltaik; Festk{\"o}rperphysik; D{\"u}nnschichtsolarzelle; Photoelektronenspektroskopie; Perowskite; Fotovoltaik; Halbleiter; D{\"u}nnschichtsolarzelle; Perowskit; Photoelektronenspektroskopie}, language = {en} } @phdthesis{Holla2016, author = {Holla, Markus}, title = {Defektcharakterisierung von Halbleitermaterialien f{\"u}r die Photovoltaik}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:co1-opus4-36384}, school = {BTU Cottbus - Senftenberg}, year = {2016}, abstract = {Zur Deckung des stetig steigenden Energiebedarfs und unter Ber{\"u}cksichtigung des Umweltschutzes werden unter anderem Solarzellen genutzt. Defekte in Solarzellen k{\"o}nnen die Effizienz verringern. In dieser Arbeit wird das Defektverst{\"a}ndnis von Silizium basierten Solarzellen erweitert. Neue experimentelle Erkenntnisse konnten zu folgenden Schwerpunkten gewonnen werden: • Siliziumnitrid- und Siliziumkarbidausscheidungen in multikristallinem Silizium • Rekombinationsaktivit{\"a}t in d{\"u}nnen Siliziumschichten • Charakterisierung der Rekombinationsaktivit{\"a}t von Germanium als Modellmaterial f{\"u}r die Siliziumkristallisation • Rekombinationsaktivit{\"a}t und Verspannung an Korngrenzen Um Ergebnisse experimenteller Defektcharakterisierung auf allgemein g{\"u}ltige Parameter der Rekombination wie z.B. Ladungstr{\"a}gerdiffusionsl{\"a}nge oder Oberfl{\"a}chenrekombinationsgeschwindigkeit zur{\"u}ckf{\"u}hren zu k{\"o}nnen, wurden zu folgenden Ph{\"a}nomenen Modelle entwickelt und Simulationen durchgef{\"u}hrt: • Getterzonen an Korngrenzen • Ermittlung von Diffusionsl{\"a}nge und Diffusionskoeffizient in D{\"u}nnschichtmaterial • 3D-Raumladungseffekte Die Nutzung der gewonnenen Erkenntnisse {\"u}ber die Rekombinationseigenschaften der Defekte liegt in einer m{\"o}glicherweise zuk{\"u}nftigen kontrollierten Defektbeeinflussung und somit einer Effizienzverbesserung von Solarzellen.}, subject = {Defekt; Defect; Halbleiter; Semiconductor; Festk{\"o}rperphysik; Halbleiter}, language = {de} } @phdthesis{Grzela2015, author = {Grzela, Tomasz}, title = {Comparative STM-based study of thermal evolution of Co and Ni germanide nanostructures on Ge(001)}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:co1-opus4-36234}, school = {BTU Cottbus - Senftenberg}, year = {2015}, abstract = {Since 1947, when Bardeen and Brattain initiated the era of microelectronics by constructing the first Germanium (Ge) transistor, semiconductors have become the main material platform for advanced integrated circuit (IC) technologies. Later on, given in particular the electrical stability of its native oxide, IC technology shifted from Ge to Silicon (Si) substrates and the dominance of Si-based complementary metal oxide semiconductor (CMOS) microelectronics is today unquestionable. However, as the semiconductor industry is approaching the limits of traditional Si CMOS scaling, the integration of new materials into Si micro- and nano-electronics is required to extend the performance and functionality of future CMOS-based IC technologies. Recently, Ge due to its superior optoelectronic properties and compatibility with conventional Si CMOS technology has re-emerged as an alternative semiconductor material on the mainstream Si technology platform. Many of the Ge integration challenges, such as e.g. doping, epitaxial quality etc., have been recently solved or minimized to an acceptable level. However, the fabrication of low resistance, thermally stable metal/Ge contacts is still one of the main barriers towards the full use of the potential offered by Ge. In particular, the formation of ohmic contacts is relevant for applications where high current densities are of importance (i.p. Ge p-MOSFET and Ge laser applications). Consequently, intensive investigations of metal/Ge contacts are imperative for future applications of Ge. Various metal/Ge contact systems were studied and demonstrated good thermal stability and promising electrical properties. However, given their widespread use in Si CMOS technologies in form of their respective silicides, Co- and Ni-germanides seem to be an obvious choice for electrical contacts in Ge-based devices. Both metal/Ge systems exhibit a complex bulk phase diagrams with a wide range of different physical properties. It is generally acknowledged that the stoichiometric CoGe2 and NiGe phases are best suited for ohmic metal contact formation, mainly due to their low resistivity. It is worth noting that the bulk phase diagram is limited in its use for nanoscience due to an increased surface/volume ratio as well as by the strong nanostructure/substrate interface influence. This PhD thesis sheds light on the formation process at the atomic level of Co and Ni germanide nanostructures on clean, reconstructed Ge(001) substrates. The main part of the presented research is based on in-situ scanning tunneling microscopy (STM) studies on the influence of subsequent, post-evaporation annealings at various temperatures in order to follow and investigate on the nano-scale the structural evolution of a few monolayers of Co and Ni metal (deposited at RT and in UHV conditions) on an atomically clean, reconstructed Ge(001) surface. Furthermore, additional techniques like LEED, (S)TEM-EDX and XPS were used to corroborate and complement the STM derived insights. It was demonstrated that - for both investigated systems - room temperature deposition of a few metal monolayers on clean Ge(001) results in a Volmer Weber growth mode. Starting with annealing treatments at relatively low temperature ranges, the formation of a continuous MetalxGey wetting layer from as-deposited 3D metal clusters on Ge(001) was detected. It should be noted that a very flat wetting layer was observed for the Co/Ge(001) system, which is different for the Ni/Ge(001) system where inhomogeneous terraced domains were formed. Finally, the 2D wetting layer gradually evolves with increasing temperature into well-ordered 3D MetalxGey nanostructures, surrounded by clean, reconstructed Ge(001). Analysis of these Co and Ni germanide nanostructures shows that the growth mechanism is different: in particular the Ni/Ge system is more reactive by means of Ni bulk diffusion and results in 3D Ni germanide nanostructures which show a strong tendency to be embedded into the Ge(001) substrate. In contrast, Co germanide nanostructures are situated initially on top of the Ge(001) substrate due to the fact that Ge diffusion dominates in the low temperature range. Only at higher annealing temperatures, Co diffusion into the bulk occurs and Co germanide nanostructures penetrate into the Ge substrate. For the Co- as well as Ni-Germanide system, the nanostructures undergo Ostwald ripening phenomena in the high temperature range. The present PhD thesis thus allows to understand on the nano-scale the main growth and reaction mechanisms of the Walser and Ben{\`e} rule set up about 40 years ago to describe metal/semiconductor interface reaction on the macro-scale.}, subject = {Scanning Tunneling Microscope; STM; Germanium; Cobalt germanides; Nickel germanides; Rastertunnelmikroskop; Nickel Germanide; Kobalt Germanide; Intermetallische Verbindungen; Schichtwachstum; Nanostruktur; Germanide; Rastertunnelmikroskop; Halbleiter}, language = {en} } @phdthesis{Skibitzki2013, author = {Skibitzki, Oliver}, title = {Material Science for high performance SiGe HBTs : Solid-Phase Epitaxy and III-V/SiGe hybrid approaches}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:co1-opus-29333}, school = {BTU Cottbus - Senftenberg}, year = {2013}, abstract = {The complexity of today´s microelectronic circuitry is not only driven by complementary metal oxide semiconductor (CMOS) scaling, but also by integration of high performance modules for various applications (e.g. wireless and broadband communication systems). These mixed signal circuitries are build up by combining digital CMOS technology with analog SiGe:C hetero-bipolar transistors (HBT) known as SiGe:C BiCMOS technology. State-of-the-art SiGe:C BiCMOS technologies achieve up to the 500 GHz. Nevertheless, Si as semiconductor material is approaching more and more its physical limits, whereby novel approaches have to be found to ensure the future development of SiGe:C HBT BiCMOS technology in order to push the maximum frequency further into the Terahertz regime. Based on this task, two novel material science strategies are investigated in this Ph.D. thesis in terms of material growth and defect studies: A.) Solid-phase epitaxy (SPE) for emitter and base resistivity: This technique has been investigated for local engineering of crystallinity in emitter and base layer of already established SiGe:C HBT technology in order to improve the speed performance. By introducing disilane as new gas source with respect to standard used silane, it is possible to reduce the CVD growth temperature for Si, enabling the differential growth of epitaxial-Si (epi-Si) on Si and amorphous Si (a-Si) on the SiO2 and Si3N4 masks. The so produced requirement for SPE treatments is evaluated for two possible areas of application: A1.) Emitter region and A2.) Base region. In both cases, SPE techniques are applied to change the standard polycrystalline-Si (poly-Si) emitter and base link area on the SiO2 and Si3N4 masks to a fully epi-Si area in order to lower emitter and base resistivity, respectively. B.) III-V/SiGe hybrid device: The ternary compound semiconductor In1-xGaxP [x=0-1] is introduced as potential new collector material as part of an III-V/SiGe hybrid HBT device. With InP having a three times higher saturation velocity, and GaP having a two times bigger bandgap than Si, this approach offers the possibility to adjust speed and power performance of HBTs in a flexible way as a function of the In1-xGaxP collector chemical composition x. The material growth and defect studies in this Ph.D. thesis produced insights, which lead to the following results for future device application: A1.) SPE for emitter region: After investigating the temperature, time and doping concentration dependence on lateral SPE length of in-situ annealed As-doped epi-Si/a-Si test structures, it was possible to crystallize up to 500 nm of a-Si on SiO2 and Si3N4 masks to epi-Si with low defect densities by a combination of 575 °C and 1000 °C postannealing. A2.) SPE for base region: After studying the dependence of time, temperature, thickness, SiO2-capping and Ge incorporation on lateral SPE length of in-situ annealed undoped epi-Si/a-Si test structures, it was possible to crystallize up to 450 nm of SiO2-capped undoped a-Si on SiO2 mask to low-defective epi-Si by 570 °C postannealing. Finally, this technique is applied in a SiGe:C base model structure in order to show the possibility to widen the monocrystalline region around the bipolar window, which results in a possibly improved base resistivity. B.) GaP/Si0.8Ge0.2/Si(001) heterostructure: For pseudomorphic GaP/Si0.8Ge0.2/Si(001) heterostructure growth, the critical thickness of GaP on Si and maximum thermal budget for GaP deposition is evaluated. A detailed structure and defect characterization study by XRD, AFM, and TEM is reported on single crystalline 170 nm GaP/20 nm Si0.8Ge0.2/Si(001) heterostructure. Results show that 20 nm Si0.8Ge0.2 on Si(001) can be overgrown by 170 nm GaP without affecting the pseudomorphism of the Si0.8Ge0.2/Si(001) systems. The GaP layer grows however partially relaxed, mainly due to defect nucleation at the GaP/Si0.8Ge0.2 interface during initial island coalescence. The achievement of 2D GaP growth conditions on Si0.8Ge0.2/Si(001) systems is thus a crucial step for achieving fully pseudomorphic heterostructures. Anti-phase domain-free GaP growth is observed for film thicknesses beyond 70 nm. In addition, no detrimental impurity diffusion could be found in the GaP/Si0.8Ge0.2/Si(001) heterostructure. Finally, it is to mention that further investigation and efforts are still needed to push these new approaches to full integration into SiGe:C HBT BiCMOS technology concepts: A.) For SPE application: Electrical studies are needed in frame of full processed devices to evaluate the value and required modifications for process integration. B.) For III-V/SiGe hybrid device: Future work has to focus on improved 2D GaP layer conditions (before introducing InP) in order to prepare truly pseudomorphic GaP/Si0.8Ge0.2/Si(001) heterostructures with low defect densities. For this purpose, selective GaP growth studies in local HBT Si0.8Ge0.2/Si(001) mesa structures are the next step.}, subject = {Halbleiter; Epitaxie; Heterostruktur; Hetero-bipolar-Transistor; Festphasenepitaxie; III-V/SiGe Hybridbauteil; Materialwissenschaft; Halbleiterphysik; Heterojunction bipolar transistor; Solid-Phase Epitaxy; III-V/SiGe hybrid device; Material science; Semiconductor physics}, language = {en} } @phdthesis{Racec2002, author = {Racec, Elena Roxana}, title = {Electrons and optical phonons in mesoscopic semiconductor heterostructures}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:co1-000000220}, school = {BTU Cottbus - Senftenberg}, year = {2002}, abstract = {We analyze here some electron properties and lattice dynamics in semiconductor heterostructures, pointing out the dramatic changes relative to the bulk properties due to the existence of the interfaces in these systems. The first part of the study is devoted to the electron scattering phenomena in noninteracting open systems and to the transport properties described in the Landauer-B{\"u}ttiker formalism. We develop a resonant theory of transport and apply it first to the conductance through a quantum dot embedded in a quantum wire and second to the capacitance of a two dimensional electron gas formed in a MIS-type semiconductor heterostructure. In the second part of the study we illustrate the four major new features of the optical phonon spectra in a strained semiconductor heterostructure in contrast to an unstrained one. The results are particularized for double heterostructures InP/GaAs/InP grown on the faces (001) and (111) of the substrate.}, subject = {Halbleiter; Mesoskopisches System; Heterostruktur; Elektron; Optisches Phonon; Semiconductor nanostructures; Transport; Open systems; Resonance theory; Electron-optical phonon interaction}, language = {en} }