@phdthesis{Mahmoodinezhad2022, author = {Mahmoodinezhad, Ali}, title = {Atomic layer deposition and characterization of metal oxide thin films}, doi = {10.26127/BTUOpen-6134}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:co1-opus4-61343}, school = {BTU Cottbus - Senftenberg}, year = {2022}, abstract = {This thesis describes low temperature growth of wide band gap metal oxide thin films deposited by thermal (T-) and plasma-enhanced (PE-) atomic layer deposition (ALD) techniques in which high quality materials are grown with atomic level precision. Metal oxides are extensively investigated due to their exceptional physical and chemical properties, including relatively wide band gap, high dielectric constant and high thermal stability. This variety of properties results in a wide range of different applications. Thin films of indium oxide (InOx), gallium oxide (GaOx), zinc oxide (ZnOx), and quaternary InOx/GaOx/ZnOx (IGZO), in addition to the well-known aluminum oxide (AlOx), and the catalyst cerium oxide (CeOx), have proven to be superior candidates for many applications; from microelectronics and optoelectronics to gas sensor devices. The demanding requirements of low-temperature deposition processes for thermal sensitive substrates, which include high layer homogeneity and conformality over large areas, makes ALD a pioneer deposition technique. Although many oxides have been grown by TALD and PEALD, the deposition of wide band gap oxides at low temperatures are rarely reported and/or being investigated. In this work, the deposition method of the individual binary oxide films and combining the respective binary processes into the developed super-cycle growth of quaternary compound have been investigated at relatively low-temperatures by TALD and PEALD. Besides, the growth characteristics and chemical properties of the deposited films were evaluated by in-situ and ex-situ characterization techniques such as spectroscopic ellipsometry (SE) and X-ray photoelectron spectroscopy (XPS), where the influence of ALD process parameters on the growth mechanism and films composition are discussed in detail for any potential applications.}, subject = {Thermal atomic layer deposition; Plasma-enhanced atomic layer deposition; Indium gallium zinc oxide; Aluminum oxide; Cerium oxide; Thermische Atomlagenabscheidung; Plasmaunterst{\"u}tzte Atomlagenabscheidung; IGZO; AlOx; CeOx; Tieftemperatur; Atomlagenabscheidung; Beschichtung; Metallschicht; D{\"u}nne Schicht; Aluminiumoxide; Ceroxide; Indiumoxide}, language = {en} }