@phdthesis{Dombrowski2000, author = {Dombrowski, Kai F.}, title = {Micro-raman investigation of mechanical stress in Si device structures and phonons in SiGe}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:co1-000000031}, school = {BTU Cottbus - Senftenberg}, year = {2000}, abstract = {This thesis consists of two parts. The first part presents an investigation of mechanical stress in silicon device structures processed with variations of the shallow trench isolation (STI) process. The measurements were performed with high spatial resolution using micro-Raman spectroscopy with ultra-violet (364 nm) laser light to excite the Raman scattering. This thesis describes in detail the advantages of UV over visible light excitation. The influence of different process parameters on the amount of mechanical stress introduced into the silicon substrate is presented. A correlation of mechanical stress levels with defect generation and degrading electrical properties is shown. The second part of this thesis presents an investigation of phonons in SiGe bulk crystals. These measurements were performed using Raman spectroscopy to clarify the assignments of various vibrational modes and explain the shift of the Ge phonon as small amounts of Si are added into a pure Ge crystal. In addition, the silicon local vibrational modes (LVM) of all three silicon isotopes are shown, thus verifying the assignment of this mode experimentally.}, subject = {Siliciumbauelement; Elastische Spannung; Raman-Spektroskopie; Silicium; Germanium; Mischkristall; Phonon; Raman-Spektroskopie; Mechanical stress; Raman; UV; Shallow trench isolation; Local vibrational mode}, language = {de} }