Angewandte Physik
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Micro- and nanostructuring with laser-induced periodic surface structures (LIPSS) has been demonstrated to be feasible in a wide variety of materials including metals, semiconductors and dielectrics. Suitable processing regimes for flat, curved and complex surfaces have been identified for many materials, allowing the generation of diverse applications in fields such as optics, tribology and medicine, to name a few. A common side effect when producing such structures in air environment is the formation of a thin surface oxide layer in the laser irradiated areas. Previous studies have shown that oxidation plays an important role in the tribological performance for which the structures where created, and very recently it has been shown that the laser-induced oxide graded layers may contribute to the formation of a new type of embedded low-spatial frequency LIPSS (LSFL) with annomalous orientation parallel to the laser polarization, in addition to the appearance of the well-known high-spatial frequency LIPSS (HSFL) at the surface. In this contribution, we explore this effect experimentally for chromium nitride (CrN) irradiated with femtosecond laser pulses and compare the findings to finite-difference time-domain (FDTD) simulations of the intensity distributions at different depth positions.
Single Femtosecond Laser-Pulse-Induced Superficial Amorphization and Re-Crystallization of Silicon
(2021)
Superficial amorphization and re-crystallization of silicon in <111> and <100> orientation after irradiation by femtosecond laser pulses (790 nm, 30 fs) are studied using optical imaging and transmission electron microscopy. Spectroscopic imaging ellipsometry (SIE) allows fast data acquisition at multiple wavelengths and provides experimental data for calculating nanometric amorphous layer thickness profiles with micrometric lateral resolution based on a thin-film layer model. For a radially Gaussian laser beam and at moderate peak fluences above the melting and below the ablation thresholds, laterally parabolic amorphous layer profiles with maximum thicknesses of several tens of nanometers were quantitatively attained. The accuracy of the calculations is verified experimentally by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (STEM-EDX). Along with topographic information obtained by atomic force microscopy (AFM), a comprehensive picture of the superficial re-solidification of silicon after local melting by femtosecond laser pulses is drawn.