Ingenieurwissenschaften und zugeordnete Tätigkeiten
Filtern
Dokumenttyp
- Zeitschriftenartikel (2)
- Vortrag (1)
Sprache
- Englisch (3)
Schlagworte
- Material defects (3) (entfernen)
Organisationseinheit der BAM
Eingeladener Vortrag
- nein (1)
The Topic of the presentationis a discussion on defects which can cause failure in cyclically loaded metallic components. Although also touching Features such as material defects such as pores or micro-shrinkages, etc. and geometric defects such as surface roughness and secondary notches (which are not considered in the design process) which origin in manufacturing, and others the presentation concentrates on non-metallic inclusions. It is prefaced by an introduction to the life cycle of a fatigue crack from initiation up to fracture. Special emphasis is put on the fact that only cracks which are not arrested during one of their distinct Propagation stages can grow to a critical size.
The paper provides an overview on material defects which may serve as fatigue crack initiation sites and can cause final fatigue failure of a component. These comprise nonmetallic inclusions in Steel and aluminum alloys, cavities such as pores, micro-shrinkages and un-welded regions in cast, sinter and additively manufactured alloys, graphite nodules, shrinkages and other items in modular cast iron, regions of defective microstructure, microcracks and secondary notches such as undercuts and surface roughness. Besides their origin, the effect and mechanisms on fatigue crack initiation and propagation are discussed.
The considerations are proceeded and accompanied by a Brief discussion of some Basic aspects such as the stages of crack propagation along their length scale, the overcoming of crack arrest and the question when a secondary notch can be treated as a crack.
Abstract. In power electronics, compound semiconductors with large bandgaps, like silicon carbide (SiC), are increasingly being used as material instead of silicon. They have a lot of advantages over silicon but are also intolerant of nanoscale material defects, so that a defect inspection with high accuracy is needed. The different defect types on SiC samples are measured with various measurement methods, including optical and tactile methods. The defect types investigated include carrots, particles, polytype inclusions and threading dislocations, and they are analysed with imaging ellipsometry, coherent Fourier scatterometry (CFS), white light interference microscopy (WLIM) and atomic force microscopy (AFM). These different measurement methods are used to investigate which method is most sensitive for which type of defect to be able to use the measurement methods more effectively. It is important to be able to identify the defects to classify them as critical or non-critical for the functionality of the end product. Once these investigations have been completed, the measurement systems can be optimally distributed to the relevant defects in further work to realize a hybrid analysis of the defects. In addition to the identification and classification of defects, such a future hybrid analysis could also include characterizations, e.g. further evaluation of ellipsometric data by using numerical simulations.